SI5475DC-T1-E3 Vishay, SI5475DC-T1-E3 Datasheet

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... GS ® 1206-8 ChipFET Marking Code Bottom View Ordering Information: Si5475DC-T1-E3 (Lead (Pb)-free) Si5475DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current a Continuous Source Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si5475DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

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... Source-Drain Diode Forward Voltage Document Number: 71324 S09-1503-Rev. C, 10-Aug-09 3000 2500 2000 1500 1000 500 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1.0 1.2 Si5475DC Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 ...

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... Si5475DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.30 0.25 0.20 I 0.15 0.10 0.05 0.00 - 0.05 - 0. Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...