SI3493DV-T1-E3 Vishay, SI3493DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3493DV-T1-E3
• Description: MOSFET P-CH D-S 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3493DV-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.065", 1.65mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71936
S09-2276-Rev. D, 02-Nov-09
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 7 A
V
0.2
GS
On-Resistance vs. Drain Current
= 10 V
4
4
= 1.8 V
V
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
0.4
I - Drain Current (A)
8
- Total Gate Charge (nC)
= 150 °C
D
Gate Charge
8
12
0.6
12
16
0.8
T
J
V
V
= 25 °C
GS
GS
16
= 2.5 V
= 4.5 V
20
1.0
20
24
1.2
3000
2500
2000
1500
1000
0.10
0.08
0.06
0.04
0.02
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 7 A
= 4.5 V
4
1
V
V
C
DS
0
T
GS
oss
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
25
Capacitance
8
2
I
D
50
= 7 A
Vishay Siliconix
12
3
75
Si3493DV
100
www.vishay.com
16
4
125
150
20
5
3