SI1431DH-T1-E3 Vishay, SI1431DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1431DH-T1-E3
• Description: MOSFET N-CH 30V SOT363
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1431DH-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 3V @ 100µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0.1
10
10
1
8
6
4
2
0
0.00
0
0
I
D
V
GS
= 2.0 A
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 4.5 V
T
0.3
2
1
J
V
= 150 °C
SD
Q
g
- Source-to-Drain Voltage (V)
-
I
D
Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
V
0.6
4
DS
2
= 15 V
T
0.9
6
J
3
= 25 °C
V
GS
= 10 V
1.2
8
4
1.5
10
5
1.00
0.80
0.60
0.40
0.20
0.00
300
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
50
0
- 50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
C
= 2.0 A
- 25
rss
5
C
2
V
V
C
T
iss
DS
GS
oss
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
25
Capacitance
4
15
50
I
D
Vishay Siliconix
V
GS
= 2.0 A
= 10 V
6
75
Si1431DH
20
www.vishay.com
100
8
25
125
150
30
10
3