EB52F3C50N-10.240M Ecliptek, EB52F3C50N-10.240M Datasheet

EB52F3C50N-10.240M

Manufacturer Part Number
EB52F3C50N-10.240M
Description
Manufacturer
Ecliptek
Datasheet

Specifications of EB52F3C50N-10.240M

Output Level
LVCMOS
Symmetry Max
60%
Operating Supply Voltage (typ)
3.3
Mounting Style
Through Hole
Screening Level
Commercial
Rad Hardened
No
Lead Free Status / RoHS Status
Not Compliant
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Stability
Frequency Stability vs. Input Voltage
Aging at 25°C
Frequency Stability vs. Load
Operating Temperature Range
Supply Voltage
Input Current
Output Voltage Logic High (Voh)
Output Voltage Logic Low (Vol)
Rise/Fall Time
Duty Cycle
Load Drive Capability
Output Logic Type
Control Voltage
Internal Trim
Modulation Bandwidth
Input Impedance
Phase Noise
Storage Temperature Range
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
Fine Leak Test
Gross Leak Test
Lead Integrity
Mechanical Shock
Resistance to Soldering Heat
Resistance to Solvents
Solderability
Temperature Cycling
Vibration
EB52F3C50N-10.240M
www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/10/2011 | Page 1 of 4
Series
3.3Vdc 14-Pin DIP LVCMOS TCXO
Operating Temperature Range
-20°C to +70°C
10.240MHz
±5.0ppm Maximum (Inclusive of Operating Temperature Range)
±0.3ppm Maximum (±5%)
±1ppm/Year Maximum
±0.2ppm Maximum (±2pF)
-20°C to +70°C
3.3Vdc ±5%
10mA Maximum
90% of Vdd Minimum
10% of Vdd Maximum
10nSec Maximum (Measured at 20% to 80% of waveform)
50% ±10% (Measured at 50% of waveform)
15pF Maximum
CMOS
None (No Connect on Pin 1)
±3ppm Minimum (Top of Can)
10kHz Minimum (Measured at -3dB with a Control Voltage of 1.65Vdc)
10kOhms Typical
-70dBc at 10Hz Offset, -100dBc at 100Hz Offset, -130dBc at 1kHz Offset, -140dBc at 10kHz Offset, -
145dBc at 100kHz Offset
-40°C to +85°C
MIL-STD-883, Method 1014 Condition A (Internal Crystal Only)
MIL-STD-883, Method 1014 Condition C (Internal Crystal Only)
MIL-STD-883, Method 2004
MIL-STD-202, Method 213 Condition C
MIL-STD-202, Method 210
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
MIL-STD-883, Method 1010
MIL-STD-883, Method 2007 Condition A
EB52F3 C 50 N -10.240M
Frequency Stability
±5.0ppm Maximum
Control Voltage
None (No Connect on Pin 1)
Nominal Frequency
10.240MHz

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EB52F3C50N-10.240M Summary of contents

Page 1

... EB52F3C50N-10.240M Series 3.3Vdc 14-Pin DIP LVCMOS TCXO Operating Temperature Range -20°C to +70°C ELECTRICAL SPECIFICATIONS Nominal Frequency 10.240MHz Frequency Stability ±5.0ppm Maximum (Inclusive of Operating Temperature Range) Frequency Stability vs. Input Voltage ±0.3ppm Maximum (±5%) Aging at 25°C ±1ppm/Year Maximum Frequency Stability vs. Load ± ...

Page 2

... EB52F3C50N-10.240M MECHANICAL DIMENSIONS (all dimensions in millimeters) Internal Trim Access 4.8 ±0.3 Hole Ø3.5 ±0.5 11.7 MARKING ±0.5 ORIENTATION 2.5 ±0.3 18.3 ±0.5 OUTPUT WAVEFORM V OH 80% of Waveform 50% of Waveform 20% of Waveform V OL Fall Time www.ecliptek.com | Specification Subject to Change Without Notice | Rev C 2/10/2011 | Page 4.0 ± ...

Page 3

... EB52F3C50N-10.240M Test Circuit for CMOS Output + Current Meter + + Power Voltage Supply Meter _ _ Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency ceramic bypass capacitor close to the package ground and V Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth (> ...

Page 4

... EB52F3C50N-10.240M Recommended Solder Reflow Methods Max S T Min S Low Temperature Solder Bath (Wave Solder) T MAX to T (Ramp-up Rate Preheat - Temperature Minimum (T MIN Temperature Typical (T TYP Temperature Maximum (T MAX Time (t MIN) S Ramp-up Rate ( Time Maintained Above: - Temperature ( Time ( Peak Temperature ( Target Peak Temperature (T ...

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