08055E104MAT2A AVX Corporation, 08055E104MAT2A Datasheet - Page 19

• Manufacturer Part Number: 08055E104MAT2A
• Description: Capacitor, Ceramic; 0.1uF; Chip; Case 0805; +/-20%; 50WVDC; SMD; Z5U; 100000 Mohm; 0.05I
• Manufacturer: AVX Corporation
• Series: 0805r

Specifications of 08055E104MAT2A

• Tolerance (+ Or -): 20%
• Voltage: 50VDC
• Temp Coeff (dielectric): Z5U
• Operating Temp Range: 10C to 85C
• Mounting Style: Surface Mount
• Construction: SMT Chip
• Case Style: Ceramic Chip
• Failure Rate: Not Required
• Wire Form: Not Required
• Product Length (mm): 2.01mm
• Product Depth (mm): 1.25mm
• Product Height (mm): 1.3mm
• Product Diameter (mm): Not Requiredmm
• Capacitance: .1uF
• Package / Case: 0805
• Brand/series: AVX
• Case Code: 0805
• Case Size: 0805
• Dielectric Strength: No breakdown or visual defects
• Insulation Resistance: 100000 Megohms
• Length: 0.079 in. ± 0.008 in.
• Material, Element: Ceramic
• Package Type: 0805
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -55 °C
• Termination: SMT
• Tolerance: ±20 %
• Voltage, Rating: 50 VDC
• Width: 0.049 in. ± 0.008 in.
• Voltage Rating: 50 Volts
• Operating Temperature Range: + 10 C to + 85 C
• Temperature Coefficient / Code: Z5U
• Product: General Type MLCCs
• Dimensions: 0.049 in W x 0.079 in L x 0.930 mm H
• Termination Style: SMD/SMT
• Lead Free Status / RoHS Status: Compliant

General Description
The
0.3 A/ns, and up to 10A/ns. At 0.3 A/ns, 100pH of parasitic
inductance can cause a voltage spike of 30mV. While this
does not sound very drastic, with the Vcc for microproces-
sors decreasing at the current rate, this can be a fairly large
percentage.
Another important, often overlooked, reason for knowing
the parasitic inductance is the calculation of the resonant
frequency. This can be important for high frequency, by-
pass capacitors, as the resonant point will give the most
signal attenuation. The resonant frequency is calculated
from the simple equation:
Insulation Resistance – Insulation Resistance is the resis-
tance measured across the terminals of a capacitor and
consists principally of the parallel resistance R
the equivalent circuit. As capacitance values and hence the
area of dielectric increases, the I.R. decreases and hence
the product (C x IR or RC) is often specified in ohm farads
or more commonly megohm-microfarads. Leakage current
40
dt
di
f
seen in current microprocessors can be as high as
res
=
2
1
LC
P
shown in
is determined by dividing the rated voltage by IR (Ohm’s
Law).
Dielectric Strength – Dielectric Strength is an expression
of the ability of a material to withstand an electrical stress.
Although dielectric strength is ordinarily expressed in volts, it
is actually dependent on the thickness of the dielectric and
thus is also more generically a function of volts/mil.
Dielectric Absorption – A capacitor does not discharge
instantaneously upon application of a short circuit, but
drains gradually after the capacitance proper has been dis-
charged. It is common practice to measure the dielectric
absorption by determining the “reappearing voltage” which
appears across a capacitor at some point in time after it has
been fully discharged under short circuit conditions.
Corona – Corona is the ionization of air or other vapors
which causes them to conduct current. It is especially
prevalent in high voltage units but can occur with low voltages
as well where high voltage gradients occur. The energy
discharged degrades the performance of the capacitor and
can in time cause catastrophic failures.