PT28-21B/F8 Everlight Electronics CO., LTD, PT28-21B/F8 Datasheet - Page 3

• Manufacturer Part Number: PT28-21B/F8
• Description: Photodetector Transistors Phototransistor
• Manufacturer: Everlight Electronics CO., LTD

Specifications of PT28-21B/F8

• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector Current (dc) (max): 20mA
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 300uA
• Rise Time: 15000ns
• Fall Time: 15000ns
• Power Dissipation: 75mW
• Peak Wavelength: 980nm
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.3mm Axial Flat Top Phototransistor
MODEL NO :
Collector-Emitter Voltage
Emitter-Collector- Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Wavelength of
Peak Sensitivity
Rang of Spectral
Bandwidth
█
█
Absolute Maximum Ratings at T
Electronic Optical Characteristics :
Parameter
Parameter
PT28-21B/F8
EVERLIGHT ELECTRONICS CO., LTD.
Symbol
BV
BV
V
I
λ
I
CE(sat)
λ
C(on)
CEO
t
t
CEO
ECO
r
f
0.5
p
Symbol
DEVICE NUMBER :
V
V
Topr
Tstg
Tsol
Pc
I
CEO
ECO
Min.
C
0.1
----
----
----
----
----
----
30
5
A
= 25℃ ℃ ℃ ℃
770---1200
ECN :
Typ.
980
----
----
----
----
0.3
-25 ~ +85
-40 ~ +85
15
15
Rating
260
30
20
75
5
DPT-028-117
Max.
100
0.4
----
----
----
----
----
----
----
Unit
mW
mA
℃
℃
℃
V
V
Unit
μS
mA
nm
nm
nA
V
V
V
REV :
PAGE :
Ee=0mW/cm
Ee=0mW/cm
Ee=1mW/cm
Ee=0mW/cm
Ee=1mW/cm
R
Condition
I
I
Notice
C
E
V
L
I
V
I
V
=100μA
=100μA
C
C
=1000Ω
CE
=2mA
CE
=1mA
CE
----
----
=20V
=5V
=5V
1.0
3/7
2
2
2
2
2