SFH 3605-3/4-Z OSRAM Opto Semiconductors Inc, SFH 3605-3/4-Z Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/5/503/osram_opto_semiconductors_inc_sml.jpg)
SFH 3605-3/4-Z
Manufacturer Part Number
SFH 3605-3/4-Z
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.SFH_3605-34-Z.pdf
(7 pages)
Specifications of SFH 3605-3/4-Z
Maximum Power Dissipation
130 mW
Maximum Dark Current
50 nA
Collector- Emitter Voltage Vceo Max
35 V
Fall Time
45 us, 75 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Rise Time
45 us, 75 us
Package / Case
MIDLED
Phototransistor Type
Phototransistor
Number Of Elements
1
Emitter-collector Voltage (max)
7V
Collector-emitter Voltage
35V
Collector Current (dc) (max)
15mA
Collector-emitter Sat Volt (max)
0.15V
Dark Current (max)
50nA
Light Current
320/500uA
Power Dissipation
130mW
Peak Wavelength
990nm
Half-intensity Angle
40deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
MIDLED
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2664
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse
package
Anschlussbelegung
Pin configuration
1)
1)
2007-04-03
Verarbeitungshinweis:
Handling indication:
Das Gehäuse ist mit Silikon vergossen. Mechanischer Streß auf der Bauteiloberfläche sollte so gering wie
möglich gehalten werden.
The package is casted with silicone. Mechanical stress at the surface of the unit should be as low as
possible.
metallisation
1)
Device casted with silicone.
Avoid mechanical stress on silicone surface.
Pad 1
(1.2)
MID mit klarem Silikonverguss
MID casted with clear Silicone
Pad 1 = Kollektor / collector
Pad 2 = Emitter / emitter
Silicone area
Isolating area
Pad 2
metallisation
1)
1.7
1.5
5
(0.8)
metallisation
SFH 3600, SFH 3605
0.75
0.55
Backside
0.42
3.3
2.9
OHF02956
0.42
0.75
0.55