BPX 85 OSRAM Opto Semiconductors Inc, BPX 85 Datasheet - Page 5
BPX 85
Manufacturer Part Number
BPX 85
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Arrayr
Datasheet
1.BPX_85.pdf
(7 pages)
Specifications of BPX 85
Maximum Power Dissipation
90 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 80 C
Minimum Operating Temperature
- 40 C
Package / Case
Multiple Digit Array
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
3
Lens Type
Transparent
Collector-emitter Voltage
35V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.15V
Dark Current (max)
50nA
Light Current
320uA
Power Dissipation
90mW
Peak Wavelength
850nm
Half-intensity Angle
36deg
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
6
Package Type
Multiple-digit Array
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0031
Relative Spectral Sensitivity
S
Photocurrent
I
Directional Characteristics
S
2011-05-27
PCE
rel
rel
S
=
rel
=
/
I
100
80
70
60
50
40
30
20
10
PCE25
f
f
%
0
400
(λ)
(ϕ)
500 600 700 800 900
o
=
f
(
T
A
),
V
CE
= 5 V
OHF04048
λ
nm
1100
Photocurrent
I
Collector-Emitter Capacitance
C
PCE
CE
C
CE
=
=
pF
f
f
8
7
6
5
4
3
2
1
0
10
(
(
V
E
-3
CE
e
),
),
10
V
-2
f
CE
= 1 MHz,
10
= 5 V
5
-1
10
0
E
10
OHF04051
= 0
V
1
CE
V
10
2
Total Power Dissipation
P
Dark Current
I
Dark Current
I
CEO
CEO
tot
I
I
CEO
=
CEO
BPX 80, BPX 82 … 89
=
=
10
10
10
10
10
10
10
10
10
nA
10
10
f
nA
f
f
4
3
2
1
0
-1
-2
-1
-2
-25
(
1
0
(
(
T
0
V
T
A
A
CE
)
),
5
),
0
V
E
10
CE
= 0
= 20 V,
25
15
20
50
25
E
75
= 0
OHF04049
OHF04050
30
V
T
˚C
CE
A
V
100
35