BPV22F Vishay, BPV22F Datasheet - Page 2

• Manufacturer Part Number: BPV22F
• Description: Photodiodes 60 Degree 215mW
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder

Specifications of BPV22F

• Lens Type: Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 80 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Wavelength Typ: 950nm
• Sensitivity: 0.6A/W
• Half Angle: 60°
• Dark Current: 2nA
• Diode Case Style: Side Looking
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Forward Voltage: 1.3V
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Responsivity: 0.6A/W
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 80uA
• Rise Time: 100ns
• Fall Time: 100ns
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81508
Rev. 1.5, 08-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Reverse light current
Temperature coefficient of I
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
Cut-off frequency
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
ra
o
60
Silicon PIN Photodiode, RoHS Compliant
For technical questions, contact: [e-mail]
V
R
V
V
V
V
= 10 V
R
R
R
R
E
E
E
E
E
80
= 10 V, R
= 10 V, R
= 12 V, R
= 12 V, R
V
e
e
e
e
e
R
= 1 mW/cm
= 1 mW/cm
V
V
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
V
= 0 V, f = 1 MHz, E = 0
R
R
TEST CONDITION
I
R
R
R
R
V
= 10 V, λ = 950 nm
= 10 V, λ = 950 nm
= 12 V, f = 1 MHz
= 5 V, λ = 870 nm
= 5 V, λ = 950 nm
R
= 100 µA, E = 0
λ = 950 nm
I
= 10 V, E = 0
V
F
100
V
L
L
L
L
R
= 50 mA
R
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 870 nm
= 1 kΩ, λ = 950 nm
= 10 V
= 5 V
2
2
2
2
2
, λ = 950 nm,
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
TK
NEP
s(λ)
s(λ)
λ
C
V
R
V
D*
I
I
λ
(BR)
I
ϕ
f
f
η
t
ro
ra
0.5
t
k
c
c
r
f
F
D
S
o
p
Vo
Ira
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
55
T
20
amb
Vishay Semiconductors
- Ambient Temperature (°C)
870 to 1050
4 x 10
6 x 10
λ = 950 nm
TYP.
V
40
- 2.6
0.35
± 60
400
370
950
100
100
0.1
0.6
70
75
80
90
R
1
2
4
1
= 5 V
-14
12
60
MAX.
1.3
30
80
BPV22F
www.vishay.com
100
cm√Hz/W
W/√ Hz
mV/K
UNIT
MHz
MHz
A/W
A/W
%/K
deg
mV
nm
nm
nA
pF
µA
µA
ns
ns
%
V
V
Ω
351