BP 104 F OSRAM Opto Semiconductors Inc, BP 104 F Datasheet - Page 5

• Manufacturer Part Number: BP 104 F
• Description: Photodiodes PHOTODIODE SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BP 104 F

• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 20 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 34 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 20V
• Forward Voltage: 1.3V
• Responsivity: 0.7A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 34uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0084

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2009-04-07
BP 104 F
BP 104 FS
0.6 (0.024)
0.4 (0.016)
Approx. weight 0.1 g
0.5 (0.020)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
Cathode marking
4.0 (0.157)
3.7 (0.146)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
4.5 (0.177)
4.3 (0.169)
6.7 (0.264)
6.2 (0.244)
5.4 (0.213)
4.9 (0.193)
Chip position
5
1.6 (0.063)
Cathode lead
1.1 (0.043)
0.9 (0.035)
0.6 (0.024)
0.4 (0.016)
0 ... 5˚
5.08 (0.200)
spacing
4.5 (0.177)
4.3 (0.169)
±0.2 (0.008)
GEOY6861
Chip position
GEOY6075
BP 104 F, BP 104 FS