SFH 300 FA OSRAM Opto Semiconductors Inc, SFH 300 FA Datasheet - Page 5

• Manufacturer Part Number: SFH 300 FA
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 300 FA

• Maximum Power Dissipation: 200 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1 3/4
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Emitter-collector Voltage (max): 7V
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Dark Current (max): 50nA
• Power Dissipation: 200mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 50deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P1193

Relative Spectral Sensitivity,
SFH 300
Photocurrent
I
Directional Characteristics
S
2007-04-02
PCE
S
rel
rel
100
=
%
/
90
80
70
60
50
40
30
20
10
I
0
PCE 25°
400
f
(ϕ)
500
S
rel
=
600
=
f
f
(
T
(λ)
700
A
),
800
V
CE
900 1000 1100
= 5 V
λ
nm
Relative Spectral Sensitivity,
SFH 300 FA
Photocurrent
I
PCE
S
%
rel
100
90
80
70
60
50
40
30
20
10
=
0
400 500 600 700 800 900 1000 1100
f
(
E
e
),
V
S
CE
rel
=
= 5 V
5
f
(λ)
λ
nm
Dark Current
V
Dark Current
I
Collector-Emitter Capacitance
C
CEO
C
I
I
CE
CE
CEO
CEO
CE
10000
nA
0.01
1000
pF
0.01
0.1
nA
100
0.1
10
10
1
SFH 300, SFH 300 FA
= 20 V,
=
1
=
8
7
6
5
4
3
2
1
0
1E-03
-25
0
f
f
(
(
V
V
5
CE
1E-02
CE
0
),
E
),
10
f
= 0
E = 0
I
1E-01
CEO
= 1 MHz,
25
15
/
I
1E+00
CEO25°
20
50
25
V
1E+01
E = 0
T
CE
=
A
V
75
CE
f
30
V
(
°C
T
1E+02
V
A
100
),
35