BPX 84 OSRAM Opto Semiconductors Inc, BPX 84 Datasheet - Page 2
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BPX 84
Manufacturer Part Number
BPX 84
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Arrayr
Datasheet
1.BPX_84.pdf
(7 pages)
Specifications of BPX 84
Maximum Power Dissipation
90 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 80 C
Minimum Operating Temperature
- 40 C
Package / Case
Multiple Digit Array
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
3
Lens Type
Transparent
Collector-emitter Voltage
35V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.15V
Dark Current (max)
50nA
Light Current
320uA
Power Dissipation
90mW
Peak Wavelength
850nm
Half-intensity Angle
36deg
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
6
Package Type
Multiple-digit Array
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0030
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Kollektorspitzenstrom, τ < 10 μs
Collector surge current
Verlustleistung,
Total power dissipation
Wärmewiderstand
Thermal resistance
2007-04-04
T
A
= 25 °C
Symbol
Symbol
T
V
I
I
P
R
C
CS
2
op
CE
tot
thJA
;
T
stg
Wert
Value
– 40 … + 80
35
50
200
90
750
Einheit
Unit
°C
V
mA
mA
mW
K/W