SDP8406-004 Honeywell, SDP8406-004 Datasheet
SDP8406-004
Specifications of SDP8406-004
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SDP8406-004 Summary of contents
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... Wide sensitivity ranges Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded in a side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package. 120 INFRA-21 ...
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... SDP8406 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. ...
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... SDP8406 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Angular displacement - degrees Fig. 3 Dark Current vs Temperature 122 SWITCHING WAVEFORM cir_015.cdr Fig. 2 Collector Current vs Ambient Temperature gra_054 ...
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... SDP8406 Silicon Phototransistor Fig. 5 Spectral Responsivity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 400 600 800 1000 1200 Wavelength - nm All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...