SDP8475-201 Honeywell, SDP8475-201 Datasheet
SDP8475-201
Specifications of SDP8475-201
Related parts for SDP8475-201
SDP8475-201 Summary of contents
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... SDP8475-201 Low Light Rejection Phototransistor FEATURES T-1 plastic package Low light level immunity 20¡ (nominal) acceptance angle Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8475 is an NPN silicon phototransistor which internal base- emitter shunt resistance. Transfer molding ...
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... SDP8475-201 Low Light Rejection Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. ...
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... SDP8475-201 Low Light Rejection Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Dark Current vs Temperature 1000 Vce = 15 100 0.1 0.01 -55 -35 -15 ...
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... Example : To design a transmissive sensor with two of Honeywell’s standard components, the SEP8505-002 and the SDP8475-201 first necessary to determine the make a irradiance level in mW/cm detector. The application conditions are the following: Min. Light Current Slope Max. Light Current Slope Min ...
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... SDP8475-201 Low Light Rejection Phototransistor Supply voltage = 5V Distance between emitter and detector = 0.4 in. (10.16mm ) IRED drive current = 20mA 2 The SEP8505-002 gives 1.0mW/cm min. to 4.0mW/cm max. under the above conditions. To obtain minimum light current output, use the minimum irradiance limit. Light current output = I ...