SDP8407-001 Honeywell, SDP8407-001 Datasheet
SDP8407-001
Specifications of SDP8407-001
Related parts for SDP8407-001
SDP8407-001 Summary of contents
Page 1
... Low profile for design flexibility Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded in an end-looking black plastic package. The chip is positioned to accept radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification ...
Page 2
... SDP8407 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.66 mW/¡C. ...
Page 3
... SDP8407 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -160 -120 -80 -40 0 +40 +80 +120 +160 Angular displacement - degrees Fig. 3 Dark Current vs Temperature All Performance Curves Show Typical Values ...
Page 4
... SDP8407 Silicon Phototransistor Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 127 ...