SDP8436-002 Honeywell, SDP8436-002 Datasheet
SDP8436-002
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SDP8436-002 Summary of contents
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... Wide sensitivity ranges Mechanically matched to SEP8736 infrared emitting diode DESCRIPTION The SDP8436 is an NPN silicon phototransistor molded in a black plastic package which combines the mounting advantages of a side-looking package with the narrow acceptance angle and high optical gain package. The SDP8436 is designed for those ...
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... SDP8436 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. ...
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... SDP8436 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Dark Current vs Temperature 130 SWITCHING WAVEFORM cir_015.cdr Fig. 2 Collector Current vs Ambient Temperature gra_013 ...
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... SDP8436 Silicon Phototransistor Fig. 5 Spectral Responsivity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 700 800 900 1000 Wavelength - nm All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...