BPV10 Vishay, BPV10 Datasheet - Page 2

• Manufacturer Part Number: BPV10
• Description: Photodiodes 10V 215mW 875nm
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder

Specifications of BPV10

• Lens Type: Clear Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 920 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 85 uA
• Maximum Dark Current: 5 nA
• Maximum Rise Time: 2.5 ns
• Maximum Fall Time: 2.5 ns
• Package / Case: T-1 3/4
• Maximum Operating Temperature: + 100 C
• Wavelength Typ: 920nm
• Sensitivity: 0.55A/W
• Bandwidth: 250MHz
• Half Angle: 20°
• Dark Current: 1nA
• Diode Case Style: T-1 3/4
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Forward Voltage: 1.3V
• Responsivity: 0.55A/W
• Dark Current (max): 5nA
• Power Dissipation: 215mW
• Light Current: 85uA
• Rise Time: 2.5ns
• Fall Time: 2.5ns
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81502
Rev. 1.6, 08-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8436
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
Silicon PIN Photodiode, RoHS Compliant
60
For technical questions, contact: [e-mail]
V
V
V
R
R
R
= 20 V
E
E
E
= 50 V, R
= 50 V, R
80
V
V
e
e
e
R
R
= 1 mW/cm
V
V
= 1 mW/cm
= 1 mW/cm
V
E
= 0 V, f = 1 MHz, E = 0
= 5 V, f = 1 MHz, E = 0
R
R
TEST CONDITION
I
R
R
A
V
= 20 V, λ = 950 nm
= 20 V, λ = 950 nm
= 5 V, λ = 950 nm
R
= 100 µA, E = 0
= 1 klx, V
λ = 950 nm
I
= 20 V, E = 0
E
E
F
V
L
L
100
A
A
= 50 mA
R
= 50 Ω, λ = 820 nm
= 50 Ω, λ = 820 nm
= 1 klx
= 1 klx
= 5 V
2
2
2
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
R
= 5 V
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
NEP
s(λ)
λ
C
C
V
V
V
I
I
I
λ
(BR)
I
I
D
ϕ
0.1
η
t
t
ro
ra
ra
K
K
O
O
r
f
F
D
D
p
94 8416
1.4
1.2
1.0
0.8
0.6
MIN.
60
38
0
T
amb
20
Vishay Semiconductors
- Ambient Temperature (°C)
380 to 1100
3 x 10
3 x 10
TYP.
0.55
± 20
480
450
920
1.0
3.8
2.5
2.5
11
80
65
85
70
72
λ = 950 nm
1
40
V
-14
R
12
= 5 V
60
MAX.
1.3
5
80
www.vishay.com
BPV10
100
cm√Hz/W
W/√Hz
UNIT
A/W
deg
mV
mV
nm
nm
nA
pF
pF
µA
µA
µA
µA
ns
ns
%
V
V
335