SI6975DQ-T1-E3 Vishay, SI6975DQ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI6975DQ-T1-E3
• Description: MOSFET P-CH DUAL G-S 12V 8TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6975DQ-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 450mV @ 5mA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si6975DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71319.
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 4
- 25
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 250 µA
Threshold Voltage
T
J
25
- Temperature (°C)
10
- 3
50
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
- 2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 2
10
- 1
100
10
1
80
60
40
20
0
0.001
- 1
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
A
1
= P
0.1
t
S-81221-Rev. B, 02-Jun-08
2
Document Number: 71319
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 124 °C/W
1
600
1
0
10