SI6969DQ-T1-E3 Vishay, SI6969DQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI6969DQ-T1-E3
• Description: MOSFET P-CH DUAL G-S 12V 8TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6969DQ-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 4.5V
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Power - Max: -

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70828
S-81221-Rev. B, 02-Jun-08
0.10
0.08
0.06
0.04
0.02
0.00
4.5
3.6
2.7
1.8
0.9
0.0
30
24
18
12
6
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
3
= 4.6 A
2
= 6 V
V
6
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
6
g
4
V
I
- Total Gate Charge (nC)
D
GS
Gate Charge
V
- Drain Current (A)
12
V
GS
= 5 thru 2.5 V
GS
9
= 1.8 V
= 2.5 V
6
12
18
8
15
V
1.5 V
GS
2 V
1 V
24
= 4.5 V
10
18
12
30
21
4000
3200
2400
1600
800
1.4
1.2
1.0
0.8
0.6
30
24
18
12
6
0
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
GS
0.5
= 4.6 A
2
= 4.5 V
Transfer Characteristics
V
V
T
GS
DS
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.0
4
Capacitance
25
C
oss
1.5
C
50
Vishay Siliconix
iss
6
25 °C
T
C
= - 55 °C
75
Si6969DQ
2.0
8
www.vishay.com
100
125 °C
2.5
10
125
3.0
150
12
3