SI6955ADQ-T1-E3 Vishay, SI6955ADQ-T1-E3 Datasheet

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SI6955ADQ-T1-E3

Manufacturer Part Number
SI6955ADQ-T1-E3
Description
MOSFET P-CH D-S 30V 8-TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6955ADQ-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6955ADQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 858
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71103
S-81221-Rev. B, 02-Jun-08
Ordering Information: Si6955ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 30
(V)
G
D
S
S
1
1
1
1
1
2
3
4
0.135 at V
0.080 at V
Si6955ADQ
R
TSSOP-8
Top View
DS(on)
J
a
= 150 °C)
a
GS
Dual P-Channel 30-V (D-S) MOSFET
GS
= - 4.5 V
(Ω)
= - 10 V
a
8
7
6
5
D
S
S
G
a
2
2
2
2
A
I
= 25 °C, unless otherwise noted
± 2.9
± 2.2
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free
G
Symbol
Symbol
T
1
R
R
TrenchFET
J
V
V
I
P
, T
P-Channel MOSFET
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
S
D
1
1
®
Power MOSFETs
Typical
± 2.9
± 2.3
10 s
- 1.0
1.14
0.73
124
88
69
- 55 to 150
± 20
± 20
- 30
Steady State
Maximum
G
2
- 0.70
± 2.5
± 2.0
0.83
0.53
110
150
83
P-Channel MOSFET
Vishay Siliconix
Si6955ADQ
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6955ADQ-T1-E3 Summary of contents

Page 1

... Si6955ADQ Top View Ordering Information: Si6955ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6955ADQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71103 S-81221-Rev. B, 02-Jun- °C J 0.9 1.2 1.5 Si6955ADQ Vishay Siliconix 1000 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 3 1.6 1.4 1.2 1.0 ...

Page 4

... Si6955ADQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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