TFBS4710-TR3 Vishay, TFBS4710-TR3 Datasheet - Page 4
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TFBS4710-TR3
Manufacturer Part Number
TFBS4710-TR3
Description
Infrared Transceivers SIR 115.2 kbits/s 2.7-5.5V Op Voltage
Manufacturer
Vishay
Type
TX/RXr
Datasheet
1.TFBS4710-TR3.pdf
(11 pages)
Specifications of TFBS4710-TR3
Wavelength
900 nm
Continual Data Transmission
115.2 Kbit/s
Transmission Distance
1 m
Radiant Intensity
70 mW/sr
Half Intensity Angle Degrees
48 deg
Pulse Width
2 us
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Led Supply Voltage
- 0.5 V to 6 V
Operating Voltage
2.4 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Dimensions
8.96 mm x 3.33 mm x 2.74 mm
Data Rate
115.2Kbps
Peak Wavelength
900nm
Angle Of Half Sensitivity
48°
Communication Distance
100
Package Type
Ultra Small Profile
Fall Time
100ns
Rise Time
100ns
Operating Supply Voltage (typ)
2.5/3.3/5V
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
5.5V
Mounting
Surface Mount
Pin Count
6
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TFBS4710-TR3
Manufacturer:
MOT
Quantity:
2 130
Part Number:
TFBS4710-TR3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Optoelectronic Characteristics
Receiver
T
Transmitter
T
Document Number 82612
Rev. 1.5, 03-Jul-06
Minimum detection threshold
irradiance, SIR mode
Maximum detection threshold
irradiance
Maximum no detection
threshold irradiance
Rise time of output signal
Fall time of output signal
RXD pulse width
Leading edge jitter
Standby /Shutdown delay
Receiver startup time
Latency
IRED operating current
IRED forward voltage
IRED leakage current
Output radiant intensity
Output radiant intensity, angle of
half intensity
Peak-emission wavelength
Spectral bandwidth
Optical rise time
Optical fall time
Optical output pulse duration
Optical overshoot
amb
amb
= 25 °C, V
= 25 °C, V
Parameter
Parameter
CC
CC
= 2.4 V to 5.5 V unless otherwise noted
= 2.4 V to 5.5 V unless otherwise noted.
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,
α = 0°, 15°
λ = 850 nm - 900 nm
10 % to 90 %, C
90 % to 10 %, C
Input pulse width > 1.2 µs
Input Irradiance = 100 mW/m
≤ 115.2 kbit/s
After shutdown active
Power-on delay
I
TXD = 0 V, 0 < V
α = 0°, 15°, TXD = High,
SD = Low
V
TXD = High or SD = High (Receiver
is inactive as long as SD = High)
Input pulse width 1.63 µs,
115.2 kbit/s
Input pulse width t
Input pulse width t
r
CC
= 300 mA
= 5.0 V, α = 0°, 15°,
Test Conditions
Test Conditions
L
L
CC
= 15 pF
= 15 pF
TXD
TXD
< 5.5 V
≥ 20 µs
< 20 µs
2
,
Symbol
t
t
r(RXD)
f(RXD)
t
Symbol
E
E
E
PW
t
L
I
e
e
e
IRED
t
t
t
t
t
Δλ
ropt
λ
fopt
I
V
opt
opt
opt
I
I
α
D
e
e
p
f
(1.0)
1.65
Min
10
10
10
1.46
t
250
880
Min
1.4
TXD
- 1
40
10
10
Vishay Semiconductors
(500)
(2.5)
Typ.
2.0
25
± 24
1.63
Typ.
300
5
1.8
70
45
t + 0.15
TFBS4710
(0.4)
Max
100
100
250
150
150
Max
0.04
3.0
350
350
900
100
100
(4)
40
1.9
1.8
50
25
4
1
www.vishay.com
(mW/cm
(µW/cm
(µW/cm
mW/m
mW/m
mW/sr
mW/sr
kW/m
Unit
Unit
mA
nm
nm
µA
ns
ns
µs
µs
µs
µs
µs
µs
%
ns
ns
ns
V
°
2
145
2
2
2
2
2
)
)
)