TSHA6203 Vishay, TSHA6203 Datasheet

Infrared Emitters 5V 25mW 875nm 12 Deg

TSHA6203

Manufacturer Part Number
TSHA6203
Description
Infrared Emitters 5V 25mW 875nm 12 Deg
Manufacturer
Vishay
Datasheet

Specifications of TSHA6203

Radiant Intensity
800 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lens Shape
Circular
Wavelength
875 nm
Package / Case
T-1 3/4
Peak Wavelength
875nm
Forward Current If(av)
100mA
Rise Time
600ns
Fall Time Tf
600ns
Supply Voltage Range
1.5V
Viewing Angle
12°
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSHA6203
Quantity:
50
DESCRIPTION
The TSHA620. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
Note
T
Document Number: 81021
Rev. 1.8, 25-Jun-09
amb
PRODUCT SUMMARY
COMPONENT
TSHA6200
TSHA6201
TSHA6202
TSHA6203
ORDERING INFORMATION
ORDERING CODE
TSHA6200
TSHA6201
TSHA6202
TSHA6203
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
Infrared Emitting Diode, 875 nm, GaAlAs
I
e
For technical questions, contact:
(mW/sr)
40
50
60
65
J-STD-051, leads 7 mm, soldered on PCB
TSHA6200, TSHA6201, TSHA6202, TSHA6203
PACKAGING
94 8389
Bulk
Bulk
Bulk
Bulk
t ≤ 5 s, 2 mm from case
t
p
TEST CONDITION
/T = 0.5, t
t
p
= 100 µs
p
= 100 µs
ϕ (deg)
± 12
± 12
± 12
± 12
emittertechsupport@vishay.com
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control and free air data transmission
• This emitter series is dedicated to systems with panes in
accordance to WEEE 2002/96/EC
systems
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
REMARKS
SYMBOL
R
T
I
λ
T
T
I
FSM
V
P
FM
T
amb
thJA
I
P
stg
sd
F
875
875
875
875
R
V
j
(nm)
p
Vishay Semiconductors
= 875 nm
- 40 to + 100
- 40 to + 85
VALUE
100
200
180
100
260
230
2.5
5
PACKAGE FORM
T-1¾
T-1¾
T-1¾
T-1¾
t
r
www.vishay.com
600
600
600
600
(ns)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
A
1

Related parts for TSHA6203

TSHA6203 Summary of contents

Page 1

... Note °C, unless otherwise specified amb Document Number: 81021 For technical questions, contact: Rev. 1.8, 25-Jun-09 TSHA6200, TSHA6201, TSHA6202, TSHA6203 FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λ • High reliability • ...

Page 2

... TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Temperature coefficient of φ ...

Page 3

... Pulse Duration (ms) 94 8003 p Fig Pulse Forward Current vs. Pulse Duration Document Number: 81021 For technical questions, contact: Rev. 1.8, 25-Jun-09 TSHA6200, TSHA6201, TSHA6202, TSHA6203 Infrared Emitting Diode, 875 nm, GaAlAs PART SYMBOL TSHA6200 TSHA6201 = 100 µs p TSHA6202 TSHA6203 TSHA6200 TSHA6201 = TSHA6202 TSHA6203 ...

Page 4

... TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors 1.2 1 1.0 0.9 0.8 0 Ambient Temperature (°C) 94 7990 amb Fig Relative Forward Voltage vs. Ambient Temperature 1000 TSHA 6203 TSHA 6202 100 TSHA 6201 10 TSHA 6200 Forward Current (mA) 94 8745 F Fig Radiant Intensity vs. Forward Current 1000 ...

Page 5

... A + 0.15 0.5 - 0.05 2.54 nom. Drawing-No.: 6.544-5259.04-4 Issue: 8; 19.05.09 96 12125 Document Number: 81021 For technical questions, contact: Rev. 1.8, 25-Jun-09 TSHA6200, TSHA6201, TSHA6202, TSHA6203 Infrared Emitting Diode, 875 nm, GaAlAs C + 0.2 0.6 - 0.1 emittertechsupport@vishay.com Vishay Semiconductors R2.49 (sphere) Area not plane Ø 5 ± 0. ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords