SEP8705-002 Honeywell, SEP8705-002 Datasheet

SEP8705-002

Manufacturer Part Number

SEP8705-002

Description

Infrared Emitters AlGaAs Emiting Diode T-1 Package

Manufacturer

Honeywell

Datasheet

1.SEP8705-002.pdf (4 pages)

Specifications of SEP8705-002

Bandwidth

80 nm (Spectral)

Current, Forward

50 mA

Package Type

T-1

Power Dissipation

70 mW

Temperature, Operating, Maximum

85 °C

Temperature, Operating, Minimum

-40 °C

Time, Fall

0.7 us

Time, Rise

0.7 us

Voltage, Forward

1.7 V

Voltage, Reverse

3 V (Break Down)

Wave Length

880 nm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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SEP8705-002

SEP Series AlGaAs Infrared Emitting Diode, T-1 Package

Representative

photograph, actual

product appearance may

vary.

Due to regional agency

approval requirements,

some products may not be

available in your area.

Please contact your

regional Honeywell office

regarding your product of

choice.

Product Type

Power Output

Beam Angle (Degree)

Package Style

Package Components

Forward Current

Continuous Forward Current

Forward Voltage

Reverse Breakdown Voltage

Output Wavelength

Spectral Bandwidth

Spectral Shift With Temperature

SEP8705-002

SEP Series AlGaAs Infrared Emitting Diode, T-1 Package

Features

Description

The SEP8705 is an aluminum gallium arsenide infrared emitting

diode transfer molded in a T-1 smoke gray plastic package. Transfer

molding of this device assures superior optical centerline

performance compared to other molding processes. These devices

typically exhibit 70% greater power intensity compared to GaAs

devices at the same forward current. Lead lengths are staggered to

provide a simple method of polarity identification.

T-1 package

15 ° (nominal) beam angle

880 nm wavelength

Consistent optical properties

Higher output than GaAs at equivalent drive current

Mechanically and spectrally matched to SDP8405

phototransistor and SDP8105 photodarlington

Product Specifications

IR Component

1.4 - 5.6 mW/cm²

Plastic

20 mA

50 mA

1.7 V

3 V

880 nm

80 nm

0.2 nm/°C

Related parts for SEP8705-002

SEP8705-002 Summary of contents

Page 1

... These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification. SEP8705-002 SEP Series AlGaAs Infrared Emitting Diode, T-1 Package Product Type Power Output ...

Page 2

... Rise and Fall Time Power Dissipation Operating Temperature Range Availability Product Name SEP8705-002 SEP Series AlGaAs Infrared Emitting Diode, T-1 Package SEP8705-002 SEP Series AlGaAs Infrared Emitting Diode, T-1 Package 0.7 µ -40 ° °C [-40 °F to 185 °F] Global Infrared Emitting Diode ...

Page 3

... SEP8705-002 SEP Series AlGaAs Infrared Emitting Diode, T-1 Package ...

Page 4

... The information presented in this product sheet (or catalog) is for reference only. DO NOT USE this document as product installation information. Complete installation, operation and maintenance information is provided in the instructions supplied with each product. Failure to comply with these instructions could result in death or serious injury. © Copyright Honeywell Inc.1998-2004 All rights reserved. ...

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