BD650-S Bourns Inc., BD650-S Datasheet

BD650-S

Manufacturer Part Number

BD650-S

Description

PNP DARLINGTON 100V 8A

Manufacturer

Bourns Inc.

Datasheet

1.BD650-S.pdf (4 pages)

Specifications of BD650-S

Polarity

PNP

Number Of Elements

Collector-emitter Voltage

100V

Collector-base Voltage(max)

120V

Emitter-base Voltage (max)

Base-emitter Saturation Voltage (max)

3@50mA@5AV

Collector Current (dc) (max)

Dc Current Gain

750@3A@3V

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Package Type

TO-220

Lead Free Status / Rohs Status

Compliant

Current page: 1 of 4
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absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for t

MAY 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

●

R O D U C T

Designed for Complementary Use with

BD645, BD647, BD649 and BD651

62.5 W at 25°C Case Temperature

8 A Continuous Collector Current

Minimum h

2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

BE(off)

= 0, R

of 750 at 3 V, 3 A

= 0)

= 0.1 Ω, V

I N F O R M A T I O N

= 0)

≤ 0.3 ms, duty cycle ≤ 10%.

= -20 V.

RATING

Pin 2 is in electrical contact with the mounting base.

PNP SILICON POWER DARLINGTONS

BD646

BD648

BD650

BD652

BD646

BD648

BD650

BD652

BD646, BD648, BD650, BD652

TO-220 PACKAGE

(TOP VIEW)

SYMBOL

½LI

CBO

CEO

EBO

stg

tot

B(on)

= -5 mA, R

-65 to +150

VALUE

-100

-120

-140

-100

-120

62.5

-0.3

260

-80

-60

-80

-12

-5

-8

= 100 Ω,

MDTRACA

UNIT

°C

Related parts for BD650-S

BD650-S Summary of contents

Page 1

... Specifications are subject to change without notice. PNP SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. RATING BD646 BD648 BD650 BD652 BD646 BD648 BD650 BD652 BD646, BD648, BD650, BD652 TO-220 PACKAGE (TOP VIEW MDTRACA SYMBOL VALUE UNIT -80 -100 V V CBO ...

Page 2

... BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter -30 mA (BR)CEO C breakdown voltage Collector-emitter CEO cut-off current -100 V CB Collector cut-off V = -120 CBO current Emitter cut-off EBO EB current Forward current transfer ratio ...

Page 3

... COLLECTOR CURRENT T = -40° 25° 100° 100 300 µs, duty cycle < -0·5 -1· Collector Current - A C Figure 3. BD646, BD648, BD650, BD652 vs COLLECTOR CURRENT TCS135AB = 300 µs, duty cycle < 100 -40° 25° 100°C C -1· Collector Current - A C Figure 2. TCS135AC -10 ...

Page 4

... BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS -10 -1·0 -0·1 -0.01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA BD646 BD648 BD650 BD652 -1·0 -10 -100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure 5 ...

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