SILIRCMOSFETSOT2310N10 GARRETT ELECTRONICS, SILIRCMOSFETSOT2310N10 Datasheet - Page 4

• Manufacturer Part Number: SILIRCMOSFETSOT2310N10
• Description: Transistor Kit
• Manufacturer: GARRETT ELECTRONICS

Specifications of SILIRCMOSFETSOT2310N10

• Peak Reflow Compatible (260 C): Yes
• Kit Contents: Notebook With 10 Values 10 EA 8V - 60V SOT-23
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si2305DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70833.
www.vishay.com
4
- 0.1
- 0.2
0.1
0.4
0.3
0.2
0.1
0.0
30
10
0.01
1
0.1
0.00
- 50
2
1
10
- 4
Source-Drain Diode Forward Voltage
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
T
Threshold Voltage
= 150 °C
I
0.4
D
J
Single Pulse
10
= 250 µA
- Temperature (°C)
25
- 3
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
10
J
100
= 25 °C
- 2
1.0
125
Square Wave Pulse Duration (sec)
1.2
150
10
- 1
0.5
0.4
0.3
0.2
0.1
12
10
1
8
6
4
2
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
0.1
GS
2
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Gate-to-Source Voltage (V)
Notes:
P
10
Single Pulse Power
DM
JM
I
D
- T
Time (sec)
= 3.5 A
1
A
t
1
= P
t
4
2
DM
S-61190-Rev. D, 03-Jul-06
Document Number: 70833
Z
thJA
thJA
10
(t)
t
t
1
2
100
= 130 °C/W
T
A
= 25 °C
6
100
500
500
8