VMMK-2503-BLKG Avago Technologies US Inc., VMMK-2503-BLKG Datasheet - Page 8

• Manufacturer Part Number: VMMK-2503-BLKG
• Description: GaAsCap Amplifier
• Manufacturer: Avago Technologies US Inc.

Specifications of VMMK-2503-BLKG

• Current - Supply: 68mA
• Frequency: 1GHz ~ 12GHz
• Gain: 13.5dB
• Noise Figure: 3dB
• P1db: 17dBm
• Package / Case: 0402 (1005 Metric) - 1.00mm L x 0.50mm W x 0.25mm H
• Rf Type: General Purpose
• Test Frequency: 6GHz
• Voltage - Supply: 5V
• Manufacturer's Type: Wideband Amplifier
• Number Of Channels: 1
• Supply Current: 88@5VmA
• Frequency (max): 12GHz
• Operating Supply Voltage (max): 6V
• Package Type: SMD
• Mounting: Surface Mount
• Pin Count: 3
• Noise Figure (typ): 3.4@6000MHzdB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 516-2217; VMMK-2503-BLKG

VMMK-2503 Application and Usage
Biasing and Operation
The VMMK-2503 is normally biased with a positive drain
supply connected to the output pin through an external
bias-tee and with bypass capacitors as shown in Figure
19. The recommended drain supply voltage is 5 V and the
corresponding drain current is approximately 65mA. The
input of the VMMK-2503 is AC coupled and a DC-blocking
capacitor is not required. Aspects of the amplifier perfor-
mance may be improved over a narrower bandwidth by
application of additional conjugate, linearity, or low noise
(*opt) matching.
Figure 19. Usage of the VMMK-2503
Biasing the device at 5V compared to 4V results in higher
gain, higher IP3 and P1dB. In a typical application, the bias-
tee can be constructed using lumped elements. The value
of the output inductor can have a major effect on both
low and high frequency operation. The demo board uses
an 10nH inductor that has self resonant frequency higher
than the maximum desired frequency of operation. At
frequencies higher than 6GHz, it may be advantageous to
use a quarter-wave long micro-strip line to act as a high-
impedance at the desired frequency of operation. This
technique proves a good solution but only over relatively
narrow bandwidths.
Another approach for broadbanding the VMMK-2503 is
to series two different value inductors with the smaller
value inductor placed closest to the device and favoring
the higher frequencies. The larger value inductor will then
offer better low frequency performance by not loading
the output of the device. The parallel combination of the
100pF and 0.1uF capacitors provide a low impedance
in the band of operation and at lower frequencies and
should be placed as close as possible to the inductor. The
low frequency bypass provides good rejection of power
supply noise and also provides a low impedance termi-
nation for third order low frequency mixing products
that will be generated when multiple in-band signals are
injected into any amplifier.
8
Input
50 Ohm line
Size: 1.1 mm x 0.6 mm (0402 component)
Input
Pad
Amp
Ground
Pad
Output
Pad
50 Ohm line
Vdd
Bias-Tee
100 pF
0.1 uF
Output
Figure 20. Evaluation/Test Board (available to qualified customer request)
Figure 21. Example application of VMMK-2503 at 5.8GHz
Refer the Absolute Maximum Ratings table for allowed DC
and thermal conditions.
S Parameter Measurements
The S parameters are measured on a 300um G-S-G
(ground signal ground) printed circuit board substrate.
Calibration is achieved with a series of through, short
and open substrates from which an accurate set of S pa-
rameters is created. The test board is .016 inch thickness
RO4350. Grounding of the device is achieved with a single
plated through hole directly under the device. The effect
of this plated through hole is included in the S parameter
measurements and is difficult to de-embed accurately.
Since the maximum recommended printed circuit board
thickness is nominally .020 inch, then the nominal effect
of printed circuit board grounding can be considered to
have already been included the published S parameters.
The product consistency distribution charts shown on
page 2 represent data taken by the production wafer probe
station using a 300um G-S wafer probe. The ground-signal
probing that is used in production allows the device to be
probed directly at the device with minimal common lead
inductance to ground. Therefore there will be a slight dif-
ference in the nominal gain obtained at the test frequency
using the 300um G-S wafer probe versus the 300um G-S-G
printed circuit board substrate method.
Input
50 Ohm line
Size: 1.1 mm x 0.6 mm (0402 component)
Input
Pad
Amp
Ground
Pad
Output
Pad
50 Ohm line
Vdd
0.1 uF
100 pF
10 nH
100 pF
Output