VMMK-2303-BLKG Avago Technologies US Inc., VMMK-2303-BLKG Datasheet - Page 8

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VMMK-2303-BLKG

Manufacturer Part Number
VMMK-2303-BLKG
Description
GaAsCap Amplifier
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of VMMK-2303-BLKG

Current - Supply
21mA
Frequency
500MHz ~ 6GHz
Gain
14dB
Noise Figure
2dB
P1db
9dBm
Package / Case
0402 (1005 Metric) - 1.00mm L x 0.50mm W x 0.25mm H
Rf Type
Cellular, W-CDMA, PCS
Test Frequency
3GHz
Voltage - Supply
1.8V
Manufacturer's Type
MMIC Amplifier
Number Of Channels
1
Supply Current
28@1.8VmA
Frequency (max)
6GHz
Operating Supply Voltage (max)
5V
Package Type
WLP
Mounting
Surface Mount
Noise Figure (typ)
2@3000MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
516-2291
VMMK-2303-BLKG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VMMK-2303-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
VMMK-2303 Application and Usage
Biasing and Operation
The VMMK-2303 can be used as a low noise amplifier or
as a driver amplifier. The nominal bias condition for the
VMMK-2303 is Vd=Vc=1.8V. At this bias condition the
VMMK-2303 provides an optimal compromise between
power consumption, noise figure, gain, power output and
OIP3. The VMMK-2303 can also be operated a Vd of 3.3V
and a Vc of 1.8V which will result in higher P1dB and OIP3.
At Vc=1.8V, the corresponding drain currents are approxi-
mately 21 and 23 mA at Vd of 1.8V and 3.3V respectively.
Figure 19. Example application of VMMK-2303 at 3GHz
The VMMK-2303 is biased with a positive supply connected
to the output pin through an external user supplied bias-
tee as shown in Figure 19. The power down feature (Vc)
at the input port is accessed through an external 10kΩ
resistor. The resistor will have minimal effect on circuit
performance. The LNA is turned on when Vc is at 1.8V and
shut off when Vc is at 0V. In a typical application, the bias-
tee on the output port can be constructed using lumped
elements. The value of the output inductor can have a
major effect on both low and high frequency operation.
The demo board uses a 15 nH inductor that has self
resonant frequency higher than the maximum desired
frequency of operation. If the self-resonant frequency of
the inductor is too close to the operating band, the value
of the inductor needs to be adjusted so that the self-
resonant frequency is significantly higher than the highest
frequency of operation. Extending the low frequency
response of the VMMK-2303 is possible by using two
different value inductors in series with the smaller value
inductor placed closest to the device and favoring the
higher frequencies. The larger value inductor will then
offer better low frequency performance by not loading
the output of the device. The parallel combination of the
100pF and 0.1uF capacitors provide a low impedance
8
Input
100 pF
10 K
Vc
50 Ohm line
Size: 1.1 mm x 0.6 mm (0402 component)
Input
Pad
Amp
Ground
Pad
Output
Pad
50 Ohm line
Vdd
0.1 uF
100 pF
100 pF
15 nH
Output
Figure 20. Evaluation/Test Board (available to qualified customer request)
in the band of operation and at lower frequencies and
should be placed as close as possible to the inductor. The
low frequency bypass provides good rejection of power
supply noise and also provides a low impedance termi-
nation for third order low frequency mixing products
that will be generated when multiple in-band signals are
injected into any amplifier. It is also suggested that a 0.1uF
capacitor be used to bypass the 10k: resistor that feeds
the Vc terminal. This will prevent noise and other spurious
from affecting the noise figure of the VMMK-2303.
Refer the Absolute Maximum Ratings table for allowed DC
and thermal conditions.
S Parameter Measurements
The S parameters are measured on a 300um G-S-G
(ground signal ground) printed circuit board substrate.
Calibration is achieved with a series of through, short
and open substrates from which an accurate set of S pa-
rameters is created. The test board is .016 inch thickness
RO4350. Grounding of the device is achieved with a single
plated through hole directly under the device. The effect
of this plated through hole is included in the S parameter
measurements and is difficult to de-embed accurately.
Since the maximum recommended printed circuit board
thickness is nominally .020 inch, then the nominal effect
of printed circuit board grounding can be considered to
have already been included the published S parameters.
The product consistency distribution charts shown on
page 2 represent data taken by the production wafer probe
station using a 300um G-S wafer probe. The ground-signal
probing that is used in production allows the device to be
probed directly at the device with minimal common lead
inductance to ground. Therefore there will be a slight dif-
ference in the nominal gain obtained at the test frequency
using the 300um G-S wafer probe versus the 300um G-S-G
printed circuit board substrate method.

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