TFDU6300-TR1 Vishay, TFDU6300-TR1 Datasheet - Page 4

• Manufacturer Part Number: TFDU6300-TR1
• Description: IRDA TRANSCEIVER FIR TINYFACE MOLD-
• Manufacturer: Vishay

Specifications of TFDU6300-TR1

• Wavelength: 886 nm
• Continual Data Transmission: 4 Mbit/s
• Radiant Intensity: 180 mW/sr
• Half Intensity Angle Degrees: 48 deg
• Pulse Width: 2.2 us
• Maximum Rise Time: 40 ns
• Maximum Fall Time: 40 ns
• Operating Voltage: 2.4 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Dimensions: 8.5 mm x 3.1 mm x 2.5 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TFDU6300
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
4
ELECTRICAL CHARACTERISTICS
PARAMETER
TRANSCEIVER
Input voltage high (TXD, SD)
Input leakage current (TXD, SD)
Input capacitance, TXD, SD
Output voltage low
Output voltage high
Output RXD current limitation
high state
low state
SD shutdown pulse duration
RXD to V
SD mode programming pulse
duration
OPTOELECTRONIC CHARACTERISTICS
PARAMETER
RECEIVER
Minimum irradiance E
angular range
Minimum irradiance E
range, MIR mode
Minimum irradiance E
range, FIR mode
Maximum irradiance E
range
Rise time of output signal
Fall time of output signal
RXD pulse width of output signal,
50 %, SIR mode
RXD pulse width of output signal,
50 %, MIR mode
RXD pulse width of output signal,
50 %, FIR mode
RXD pulse width of output signal,
50 %, FIR mode
Stochastic jitter, leading edge
Receiver start up time
Latency
T
Typical values are for design aid only, not guaranteed nor subject to production testing.
The typical threshold level is 0.5 x V
current.
amb
(4)
= 25 °C, V
CC1
impedance
(3)
CC1
= V
e
e
e
e
[e-mail], [e-mail],
(2)
in angular
inangular
in angular
CC2
in
For technical questions within your region, please contact one of the following:
= 2.4 V to 3.6 V unless otherwise noted.
CC1
Input irradiance = 100 mW/m
TEST CONDITIONS
After completion of shutdown
Activating shutdown
P
Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
(V
10 % to 90 %, C
90 % to 10 %, C
Wopt
V
Short to ground
9.6 kbit/s to 115.2 kbit/s
P
P
programming sequence
CC1
CMOS level
I
1.4 µs < P
 = 850 nm to 900 nm,
 = 850 nm to 900 nm,
 = 850 nm to 900 nm,
 = 850 nm to 900 nm
IN
C
C
Short to V
OH
I
Wopt
Wopt
TEST CONDITIONS
OL
load
load
All modes
Input pulse length
Input pulse length
Input pulse length
Input pulse length
= 0.9 x V
= 217 ns, 1.152 Mbit/s
= 3 V) . It is recommended to use the specified min./max. values to avoid increased operating
= - 250 µA
power on delay
= 500 µA
 115.2 kbit/s
1.152 Mbit/s
1.152 Mbit/s
V
V
V
= 125 ns, 4 Mbit/s
= 250 ns, 4 Mbit/s
= 15 pF
= 15 pF
CC
CC
CC
4 Mbit/s
4 Mbit/s
(1)
= 2.4 V
= 2.4 V
= 2.4 V
CC1
Wopt
CC1
(2)
for 2.4 V to 3.6 V Operation
L
L
< 25 µs
= 15 pF
= 15 pF
(1)
2
,
SYMBOL
t
R
SDPW
V
I
V
V
ICH
C
RXD
OH
OL
IH
SYMBOL
I
t
t
r (RXD)
f (RXD)
[e-mail]
t
t
t
t
E
E
E
E
PW
PW
PW
PW
t
L
e
e
e
e
0.9 x V
V
CC
MIN.
400
200
- 1
30
- 0.3
(500)
MIN.
CC1
105
105
225
1.6
10
10
5
TYP.
500
TYP.
(10)
(13)
100
130
250
125
250
2.2
(5)
50
40
Document Number: 84763
MAX.
600
+ 1
0.4
20
20
MAX.

6
5
(20)
200
275
145
275
350
250
100
Rev. 2.0, 04-Aug-09
(8)
80
40
40
25
80
3
(mW/cm
(µW/cm
(µW/cm
(µW/cm
mW/m
mW/m
mW/m
UNIT
kW/m
UNIT
mA
mA
µA
pF
k
µs
ns
V
V
V
ns
ns
µs
ns
ns
ns
ns
ns
ns
µs
µs
2
2
2
2
2
2
2
2
)
)
)
)