MGA-655T6-BLKG Avago Technologies US Inc., MGA-655T6-BLKG Datasheet - Page 2

• Manufacturer Part Number: MGA-655T6-BLKG
• Description: IC,Microwave/Millimeter Wave Amplifier,SINGLE,GAAS,LLCC,6PIN,PLASTIC
• Manufacturer: Avago Technologies US Inc.
• Type: Low Noiser

Specifications of MGA-655T6-BLKG

• Current - Supply: 10mA
• Frequency: 2.5GHz ~ 4GHz
• Gain: 14.7dB
• Noise Figure: 1.17dB
• P1db: 12dBm
• Package / Case: 6-XFDFN Exposed Pad
• Rf Type: General Purpose
• Test Frequency: 3.5GHz
• Voltage - Supply: 3V
• Amplifier Type: MMIC
• Bandwidth: 2.5 to 4 GHz
• Current, Input Bias: 10 mA
• Impedance, Thermal: 75 °C/W
• Power Dissipation: 66 mW
• Voltage, Supply: 4 V
• Manufacturer's Type: Low Noise Amplifier
• Number Of Channels: 1
• Supply Current: 14@3VmA
• Frequency (max): 4GHz
• Operating Supply Voltage (typ): 3V
• Package Type: Ultra Thin profile
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 1.2@3500MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MGA-655T6
Low Noise Amplifier with Bypass Mode
in Low Profile Package
Data Sheet
Description
Avago Technologies’ MGA-655T6 is an economical,
easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with
Bypass mode. The LNA has low noise and high linear-
ity achieved through the use of Avago Technologies’
proprietary 0.5 µm GaAs Enhancement-mode pHEMT
process. The Bypass mode enables the LNA to be by-
passed during high input signal power and reduce
current consumption. It is housed in a low profile 2 x 1.3
x 0.4 mm 6-pin Ultra Thin Package. The compact foot-
print and low profile coupled with low noise, high linear-
ity make the MGA-655T6 an ideal choice as a low noise
amplifier for mobile and CPE receivers in the WiMax and
WLL (2.5-4) GHz band.
Component Image
2.0 x 1.3 x 0.4 mm
Note:
Packsage marking provides orientation and identification
“5F” = Product Code
“Y” = Year of Manufacture
“M” = Month of Manufacture
Pin Configuration
PIN 1 (Bypass)
PIN 3 (Ground)
PIN 2 (RF_In)
•
5FYM
3
6-Lead Ultra Thin Package
TOP VIEW
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge, Damage and Control.
GND
PIN 6 (Not Used)
PIN 5 (RF_Out)
PIN 4 (VDD)
Features
• Low nominal operating current
• Simple input/output matching network
• Broadband operation (2.5 – 4 ) GHz
• Adjustable bias current for gain/IP3 optimization
• Very low noise figure
• Bypass mode using a single pin
• Low current consumption in bypass mode, <100 µA
• Fully matched to 50 ohm in bypass mode
• High Linearity in LNA and bypass mode
• GaAs E-pHEMT Technology
• Low profile package size: 2.0 x 1.3 x 0.4 mm
• Excellent uniformity in product specifications
• Tape-and-reel packaging option available
Typical Performance
• 3.5 GHz; Vdd = 3 V, Vbypass = 2.7 V (typ.), Ids = 10 mA
• 14.7 dB gain
• 1.2 dB noise figure
• +5.5 dBm Input IP3
• -2 dBm input power at 1 dB gain compression
• 4.2 dB insertion loss in bypass mode
• 19 dBm IIP3 in bypass mode (pin = -20 dBm)
• <104 µA current consumption in bypass & shutdown
Applications
• Low noise amplifier for Wimax, Wireless Local Loop
• Other ultra low noise applications in the (2.5 – 4) GHz
Note:
1. Enhancement mode technology employs positive Vgs, thereby
(typ.)
mode
band
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
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