MGA-30989-TR1G Avago Technologies US Inc., MGA-30989-TR1G Datasheet - Page 2

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MGA-30989-TR1G

Manufacturer Part Number
MGA-30989-TR1G
Description
37dBm Gain Block (High Band)
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of MGA-30989-TR1G

Current - Supply
51mA
Frequency
2GHz ~ 6GHz
Gain
9.6dB
Noise Figure
1.65dB
P1db
23.8dBm
Package / Case
TO-243-3, SC-62, SOT-89
Rf Type
General Purpose
Test Frequency
5GHz
Voltage - Supply
5V
Manufacturer's Type
MMIC Amplifier
Number Of Channels
1
Frequency (max)
6GHz
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5.5V
Package Type
SOT-89
Mounting
Surface Mount
Pin Count
3 +Tab
Noise Figure (typ)
1.65@5000MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Rating
Product Consistency Distribution Charts
Figure 1. Ids, LSL=42mA , nominal=51mA, USL=66mA
Figure 3. OIP3, LSL=35dBm, nominal=38.4dBm
Figure 5. NF, nominal=1.65dB, USL=2.1dB
2
Symbol
V
P
P
T
T
diss
j,MAX
STG
dd,max
in,max
1.4
35
LSL
LSL
1.5
Parameter
Device Voltage, RF output to ground
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
36
1.6
50
1.7
37
[1]
T
A
=25°C
1.8
[3]
38
60
1.9
[1, 2]
39
USL
2
USL
Units
V
dBm
W
°C
°C
2.1
Absolute Max.
5.5
24
0.47
150
-65 to 150
Figure 2. Gain, LSL=8.5dB, nominal=9.6dB, USL=10.5dB
Figure 4. P1dB, LSL=22dBm, nominal=23.8dBm
Notes:
1. Distribution data sample size is 3000 samples taken from 3 different
2. Measurements were made on a characterization test board, which
22
8.5
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
represents a trade-off between optimal OIP3, gain and P1dB. Circuit
trace losses have not been de-embedded from measurements
above.
LSL
LSL
22.5
9
Thermal Resistance
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infrared
3. This is limited by maximum Vdd and Ids.
Thermal Resistance
(Vdd = 5 V, Ids = 48 mA, Tc = 85°C)
these limits may cause permanent damage.
measurement technique.
Derate 12.3 mW/°C for Tc >112°C.
23
9.5
23.5
[2]
10
T
JC
24
= 81.2°C/W
USL
10.5
24.5

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