MGA-30216-TR2G Avago Technologies US Inc., MGA-30216-TR2G Datasheet - Page 2

• Manufacturer Part Number: MGA-30216-TR2G
• Description: IC,Microwave/Millimeter Wave Amplifier,SINGLE,GAAS,LLCC,16PIN,PLASTIC
• Manufacturer: Avago Technologies US Inc.

Specifications of MGA-30216-TR2G

• Current - Supply: 400mA
• Frequency: 1.7GHz ~ 2.7GHz
• Gain: 14.2dB
• Noise Figure: 2.8dB
• P1db: 29dBm
• Package / Case: 16-VFQFN Exposed Pad
• Test Frequency: 2GHz
• Voltage - Supply: 5V
• Manufacturer's Type: Linear Amplifier
• Number Of Channels: 1
• Supply Current: 400mA
• Frequency (max): 2.7GHz
• Operating Supply Voltage (typ): 5V
• Package Type: QFN EP
• Mounting: Surface Mount
• Pin Count: 16
• Noise Figure (typ): 2.8@2000MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Rf Type: -
• Lead Free Status / Rohs Status: Compliant

Absolute Maximum Rating
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. This is limited by maximum Vdd and Ids. Derate 28mW/ °C for Tc>70.8 °C.
3. Thermal resistance measured using Infra-Red measurement technique.
Electrical Specifications
T
specified.
Notes:
4. Measurements at 2.0GHz obtained using demo board described in Figure 6 and 7.
5. 2.0GHz OIP3 test condition: F
6. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
2
Symbol
V
I
V
P
P
T
T
Symbol
Ids
Ictrl
Gain
OIP3
OP1dB
PAE
NF
S11
S22
S12
Thermal Resistance
A
ds,max
diss
j, max
STG
dd,max
ctrl,max
in,max
= 25 °C, Vdd =5V, Vctrl =5V, RF performance at 2.0 GHz, measured on demo board (see Fig. 7) unless otherwise
application note (if applicable) for more details.
[5]
Parameter and Test Condition
Quiescent current
Vctrl current
Gain
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Power Added Efficiency
Noise Figure
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Reverse Isolation
Parameter
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
[3]
q
jc
[4]
= 36°C/W (Vdd=5, Ids=200mA, Tc=85ºC)
[1]
RF1
T
A
- F
=25
RF2
o
= 10MHz with input power of -5dBm per tone measured at worse side band
C
[2]
Units
V
mA
V
dBm
W
°C
°C
Units
mA
mA
dB
dBm
dBm
%
dB
dB
dB
dB
Absolute Max.
-65 to 150
5.5
400
5.5
2.2
150
Min.
155
-
13
41
27
-
-
-
-
-
22
Typ.
206
7
14.0
45.3
29
48.9
2.8
-18
-22
-21
Max.
255
-
16
-
-
-
-
-
-
-