MGA-12516-TR1G Avago Technologies US Inc., MGA-12516-TR1G Datasheet - Page 2

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MGA-12516-TR1G

Manufacturer Part Number
MGA-12516-TR1G
Description
IC,Microwave/Millimeter Wave Amplifier,DUAL,GAAS,LLCC,16PIN,PLASTIC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of MGA-12516-TR1G

Package / Case
16-VQFN Exposed Pad, 16-HVQFN, 16-SQFN, 16-DHVQFN
Manufacturer's Type
Low Noise Amplifier
Number Of Channels
2
Frequency (max)
3GHz
Operating Supply Voltage (max)
6V
Package Type
SLP EP
Mounting
Surface Mount
Pin Count
16
Noise Figure (typ)
0.58@1950MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Voltage - Supply
-
Frequency
-
Rf Type
-
Gain
-
Noise Figure
-
P1db
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-12516-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
MGA-12516 Absolute Maximum Rating
Thermal Resistance
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Power dissipation with both channels turned on. Board temperature T
3. Thermal resistance measured using Infra-red measurement technique, with both channels turned on, hence IDDtotal=100mA.
Electrical Specifications
RF performance at 4V, 50mA,1.95 GHz, T
component list in Table 1, for 1.95GHz matching.
Notes:
4. Board transmission line losses have been deembedded.
5. 1.95GHz IP3 test condition: f
2
Symbol
VGG
NF
Gain
OIP3
OP1dB
IRL
ORL
|S12|
|ISOL
Symbol
VDD
VGG
P
P
P
T
T
diss
j
STG
in,max
in,max
[4]
[5]
1-2
(ON)
(OFF)
|
Parameter and Test Condition
Operational Gate Voltage (to adjust for given IDD)
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Reverse Isolation
Isolation between IN1 and IN2
Parameter
Device Voltage, RF output to ground
Gate Voltage
CW RF Input Power (at V
CW RF Input Power( at V
Total Power Dissipation
Junction Temperature
Storage Temperature
[3], θ
jc
= 34 ºC/Wat VDD= 4V, IDD=50mA per channel
tone1
= 1.950 GHz, f
[1]
[2]
DD
DD
A
=4V, V
=4V, V
= 25 °C, given for each RF channel, measured on the demo board in Fig. 28 with
tone2
= 1.951 GHz with input power of -20dBm per tone.
GG
GG
=0.58V).
=0V)
B
is 25
o
C. Derate 29.5mW/
Units
V
dB
dB
dBm
dBm
dB
dB
dB
dB
Units
V
V
dBm
dBm
W
o
o
C
C
o
C for T
Min.
0.43
22.3
Absolute Max.
6
0.8
18
28
1.2
150
-65 to 150
B
>109
o
C.
Typ.
0.58
0.58
24
33.3
18.4
13.5
4.6
38.6
43
Max.
0.7
0.9
25.8

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