CNY17F-3X016 Vishay, CNY17F-3X016 Datasheet - Page 6
![Optocoupler](/photos/15/85/158567/dip6_sml.jpg)
CNY17F-3X016
Manufacturer Part Number
CNY17F-3X016
Description
Optocoupler
Manufacturer
Vishay
Specifications of CNY17F-3X016
Leaded Process Compatible
Yes
Forward Current
60 mA
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
400 mV
Isolation Voltage
5300 Vrms
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
60mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
6
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CNY17F-3X016
Manufacturer:
PRAIRIECOMM
Quantity:
52
CNY17F
Vishay Semiconductors
www.vishay.com
226
Collector Current and Modulation Depth CNY17F-2
Collector Current and Modulation Depth CNY17F-3
Collector Current and Modulation Depth CNY17F-4
icny17f_13
icny17f_14
icny17f_15
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
Fig. 13 - Saturation Voltage vs.
Fig. 14 - Saturation Voltage vs.
Fig. 15 - Saturation Voltage vs.
1
1
1
V
V
CEsat
CEsat
I
I
F
F
= 3 x I
= 2 x I
= f (I
= f (I
V
CEsat
C
C
I
F
) (T
C
) (T
C
= 2 x I
= f (I
A
A
I
I
F
C
= 25 °C)
= 25 °C)
I
I
C
= I
C
C
(mA)
) (T
10
C
10
(mA)
10
(mA)
C
For technical questions, contact: optocoupler.answers@vishay.com
I
I
F
F
A
= 3 x I
= 2 x I
= 25 °C)
I
F
I
C
C
= 3 x I
F
Optocoupler, Phototransistor
Output, no Base Connection
= I
C
C
100
100
100
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
icny17f_16
icny17f_17
icny17f_18
Fig. 18 - Permissible Forward Current Diode
120
200
150
100
10
10
10
10
90
60
30
50
0
0
4
3
2
1
Fig. 16 - Permissible Pulse Load
0
0
10
0.05
0.1
0.2
0.5
DC
-5
D = 0
10
0.005
0.01
0.02
-4
25
25
P
Diode
D =
10
I
tot
F
Transistor
-3
= f (T
= f (T
T
T
T
t
T
A
p
A
t
50
p
50
A
(°C)
10
D = parameter,
(°C)
A
= 25 °C, I
(s)
A
)
)
-2
t
Document Number: 83607
p
10
T
-1
75
75
F
Rev. 1.6, 10-Dec-08
= f(t
10
p
)
0
I
F
100
10
100
1