AMMC-6333-W10 Avago Technologies US Inc., AMMC-6333-W10 Datasheet - Page 9

• Manufacturer Part Number: AMMC-6333-W10
• Description: 17-33 GHz Driver Amplifier
• Manufacturer: Avago Technologies US Inc.

Specifications of AMMC-6333-W10

• Function: Amplifier
• Number Of Channels: 1
• Frequency (max): 33GHz
• Power Supply Requirement: Single
• Single Supply Voltage (max): 5.5V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF
Biasing Considerations
The AMMC-6333 is a balanced amplifier consisting of two
four stage single-ended amplifiers, two Lange couplers, a
power monitoring detector, a reference detector for tem-
perature compensation, and a current mirror for the gate
biasing (Figure 17).
The recommended quiescent DC bias conditions for
optimum gain, output power, efficiency, and reliability
are: Vd = 5 V with Vg set for I
voltage range is from 3 to 5 V. Drain current range is from
200 mA to 350 mA. The AMMC-6333 can be biased with a
dual or single positive DC source (Figure 18).
The output power detection network provides a way to
monitor output power. The differential voltage between
the DET_R and DET_O outputs can be correlated with the
RF power emerging from the RF output port. This voltage
is given by:
V = (V
Figure 17. AMMC-6333 schematic
9
in
DET_R
– V
V
DET_O
g
) – V
OFS
dQ
= 230 mA. The drain bias
Four stage wideband amplifier
Where:
The offset voltage (V
turning off the input power and measuring V. The error
due to temperature drift should be less than 0.01dB/50°C.
When V
ture the drift error should be less than 0.25dB. Finally,
V
stored in a lookup table, or it can be measured at two
temperatures and a linear fit used to calculate V
temperature.
The RF ports are AC coupled at the RF input to the first
stage and the RF output of the final stage. No ground
wires are needed since ground connections are made
with plated through-holes to the backside of the device.
OFS
be characterized over a range of temperatures and
OFS
V
V
V
DET_R
DET_O
OFS
is determined at a single reference tempera-
is the offset voltage at zero input power
is the voltage at the DET_R port
is a voltage at the DET_O port
OFS)
V
d
V
can be at each power level by
d
DET_O
DET_R
OFS
RF
at any
out