SDP8475-201 Honeywell Sensing and Control, SDP8475-201 Datasheet

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SDP8475-201

Manufacturer Part Number
SDP8475-201
Description
TRANSISTOR, PHOTO, NPN, 935NM, T-1
Manufacturer
Honeywell Sensing and Control
Datasheets
1.SEP8506-002.pdf (18 pages)
2.SDP8475-201.pdf (5 pages)

Specifications of SDP8475-201

Transistor Polarity
NPN
Power Consumption
70mW
Viewing Angle
20°
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
DESCRIPTION
SDP8475-201
Low Light Rejection Phototransistor
The SDP8475 is an NPN silicon phototransistor which
internal base- emitter shunt resistance. Transfer molding
of this device in a clear T- 1 plastic package assures
superior optical centerline performance compared to
other molding processes. Lead lengths are staggered to
provide a simple method of polarity identification.
Distinguising Feature:
This device incorporates all of the desired features of a
standard phototransistor with the advantage of low light
immunity. The phototransistor switching occurs when
the incident light increases above the threshold (knee
point). When the light level exceeds the knee point of
the device, it will function as a standard phototransistor.
Chart A illustrates the light current output of the low light
rejection phototransistor as compared to a standard
phototransistor with similar sensitivity.
Typical Application Uses:
Ideally suited for use in applications which require
ambient light rejection, or in transmissive applications
where the interrupter media is semi- transparent to
infrared energy. This device also provides high contrast
ratio in reflective applications where unwanted
background reflection is a possibility.
136
T-1 plastic package
Low light level immunity
20¡ (nominal) acceptance angle
Mechanically and spectrally matched to
SEP8505 and SEP8705 infrared emitting diodes
DIM_100.ds4
.125 (3.18)
.115 (2.92)
INFRA-22.TIF
Tolerance
OUTLINE DIMENSIONS in inches (mm)
.200(5.08)
.180(4.57)
DIA.
3 plc decimals
2 plc decimals
(6.35)
MAX.
.250
.03 (.76)
COLLECTOR
.05(1.27)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
EMITTER
(12.7)
.500
±0.005(0.12)
±0.020(0.51)
MIN.
.020 SQ.LEADTYP
(.51)
.155
(3.94)
DIA.
(1.27)
.050

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SDP8475-201 Summary of contents

Page 1

... SDP8475-201 Low Light Rejection Phototransistor FEATURES T-1 plastic package Low light level immunity 20¡ (nominal) acceptance angle Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes DESCRIPTION The SDP8475 is an NPN silicon phototransistor which internal base- emitter shunt resistance. Transfer molding ...

Page 2

... SDP8475-201 Low Light Rejection Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. ...

Page 3

... SDP8475-201 Low Light Rejection Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Dark Current vs Temperature 1000 Vce = 15 100 0.1 0.01 -55 -35 -15 ...

Page 4

... Example : To design a transmissive sensor with two of Honeywell’s standard components, the SEP8505-002 and the SDP8475-201 first necessary to determine the make a irradiance level in mW/cm detector. The application conditions are the following: Min. Light Current Slope Max. Light Current Slope Min ...

Page 5

... SDP8475-201 Low Light Rejection Phototransistor Supply voltage = 5V Distance between emitter and detector = 0.4 in. (10.16mm ) IRED drive current = 20mA 2 The SEP8505-002 gives 1.0mW/cm min. to 4.0mW/cm max. under the above conditions. To obtain minimum light current output, use the minimum irradiance limit. Light current output = I ...

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