NTE3037 NTE ELECTRONICS, NTE3037 Datasheet
NTE3037
Manufacturer Part Number
NTE3037
Description
PHOTOTRANSISTOR,NPN,50M,TO-18
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE3037.pdf
(2 pages)
Specifications of NTE3037
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE3037 is designed for counters, Industrial and process control, sorters, switching and logic
controls. This device is packaged in a TO−18 case with domed glass lid.
Features:
D High Sensitivity
D Base Contact Externally Available
D Saturation Level Directly Compatible with Most TTL
Absolute Maximum Ratings: (T
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Emitter−Collector Voltage, V
Collector Current (I
Collector Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.5mm from body, 5sec max), T
Opto−Electrical Characteristics: (T
Note 1. Color temperature = 2870°K, Standard Tungsten Lamp.
Dark Current
Light Current
Collector−Emitter Saturation Voltage
Rise Time
Fall Time
Derate Above 25°C
Parameter
L
), I
Silicon NPN Phototransistor Detector
C
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
opr
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
I
Symbol
V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
CE(sat)
(I
I
t
= +25°C unless otherwise specified)
t
CEO
L
r
f
NTE3037
)
V
V
Note 1
I
Note 1
V
R
R
C
CE
CE
CC
L
= 30µA, E = 0.1mW/cm
= 100Ω
= 30V, E = 0
= 3V, E = 0.1mW/cm
= 10V, I
100Ω
Test Conditions
C
= 10mA,
L
2
2
,
,
. . . . . . . . . . . . . . . .
Min
60
−
−
−
−
0.25
Typ
200
10
2
2
−30° to +125°C
−65° to +150°C
Max Unit
200
0.4
1.2mW/°C
−
−
−
150mW
+260°C
50mA
µA
µA
µs
µs
V
40V
50V
5V
5V
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NTE3037 Summary of contents
Page 1
... Silicon NPN Phototransistor Detector Description: The NTE3037 is designed for counters, Industrial and process control, sorters, switching and logic controls. This device is packaged in a TO−18 case with domed glass lid. Features: D High Sensitivity D Base Contact Externally Available D Saturation Level Directly Compatible with Most TTL Absolute Maximum Ratings: (T Collector− ...
Page 2
Dia Typ Emitter .228 (5.79) Max .185 (4.69) .276 (7.01) .177 Max (4.5) .500 (12.7) Min .100 (2.54) Dia Base Collector/Case ...