NTE3036 NTE ELECTRONICS, NTE3036 Datasheet
NTE3036
Manufacturer Part Number
NTE3036
Description
NPN SI PHOTODARLINGTON
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE3036.pdf
(2 pages)
Specifications of NTE3036
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for
use in applications such as industrial inspection, processing and control, counter, sorters, switching
and logic circuit or any design requiring very high radiation sensitivity at low light levels.
Features:
D Popular TO18 Type Hermetic Package for Easy Handling and Mounting
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 12mA @ H = 0.5mW/cm
D External Base for Added Control
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Light Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Static Characteristics
Collector Dark Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdwon Voltage
Derate Above 25 C
Parameter
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Photo Darlington Light Detector
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
I
CEO
Phototransistor
D
J
NTE3036
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
I
I
I
C
C
E
CE
= 100 A
= 100 A
= 100 A
= 10V, H
Test Conditions
2
0
Min
50
40
10
–
15.5
Typ
100
10
80
–65 to +200 C
–65 to +200 C
1.43mW/ C
Max
100
–
–
–
250mW
250mA
Unit
nA
V
V
V
50V
40V
10V
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NTE3036 Summary of contents
Page 1
... Silicon NPN Photo Darlington Light Detector Description: The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for use in applications such as industrial inspection, processing and control, counter, sorters, switching and logic circuit or any design requiring very high radiation sensitivity at low light levels. ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Optical Characteristics Light Current Collector–Emitter Saturation Voltage Photo Current Rise Time Photo Current Fall Time Note 1. Radiation flux density (H) is equal to 0.5mW/cm temperature of 2780 K. Note 2. For unsaturated response time ...