NTE3031 NTE ELECTRONICS, NTE3031 Datasheet

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NTE3031

Manufacturer Part Number
NTE3031
Description
PHOTOTRANSISTOR,NPN,40M,TO-46
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE3031

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Continuous Device Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead temperature (During Soldering, 3 min), T
Electrical Characteristics: (T
Note 1. Radiation flux density (H) equal to 5mW/cm
Note 2. Angular response is defined as the total included angle between the half sensitivity points
Static Characteristics
Collector Dark Current
Collector–Emitter Breakdown Voltage
Emitter–Collector Breakdown Voltage
Saturation Voltage
Optical Characteristics
Light Current
Photo Current Rise Time
Derate Above 25 C
temperature of 2875 K.
and assuming a point source.
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
ECO
stg
A
Phototransistor Detector
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
D
A
NPN–Si, Visible & IR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
V
(BR)CEO
(BR)ECO
CE(sat)
I
I
t
D
L
r
J
NTE3031
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
V
I
I
I
V
R
I
L
C
E
C
CE
CE
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1mA (Peak)
= 100 A
= 100 A
= 0.4mA
= 1000 , V
= 5V, R
= 10V
Test Conditions
2
emitted from a tungsten source at a color
L
= 100 , Note 1
CC
= 5V,
Min
30
5
1
Typ
0.2
6
–55 to +125 C
–65 to +150 C
Max Unit
1.43mW/ C
100
150mW
+260 C
mA
nA
V
V
V
30V
s
5V

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NTE3031 Summary of contents

Page 1

... Light Current Photo Current Rise Time Note 1. Radiation flux density (H) equal to 5mW/cm temperature of 2875 K. Note 2. Angular response is defined as the total included angle between the half sensitivity points and assuming a point source. NTE3031 Phototransistor Detector NPN–Si, Visible & +25 C unless otherwise specified ...

Page 2

Dia Window on Center Line .150 (3.81) Die Seating Plane .040 (1.02) .100 (2.54) Dia Collector .210 (5.33) Dia .184 (4.67) Dia .208 (5.28) .021 (0.53) .500 (12.7) Min .018 (0.45) Dia Typ 45 Emitter Base ...

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