OP580DA OPTEK TECHNOLOGY, OP580DA Datasheet - Page 2

• Manufacturer Part Number: OP580DA
• Description: TRANSISTOR, PHOTO, NPN, 935NM, PLCC-2
• Manufacturer: OPTEK TECHNOLOGY

Specifications of OP580DA

• Transistor Polarity: NPN
• Wavelength Typ: 935nm
• Power Consumption: 100mW
• Viewing Angle: 100°
• No. Of Pins: 2
• Half Angle: 100°
• Rise Time: 50µs
• Transistor Type: Darlington
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Silicon Photo Darlington in PLCC-2 Package
OP580DA
Absolute Maximum Ratings
Electrical Characteristics
Issue A
Page 2 of 3
SYMBOL
V
V
V
I
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. E
4. To calculate typical collector dark current in µA, use the formula I
(BR)CEO
(BR)ECO
CE(SAT)
C(ON)
I
t
CE0
r
100
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
, t
80
60
40
20
10% over the entire lens surface of the phototransistor being tested.
400
f
0
E(APT)
03/08
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Rise Time , Fall Time
is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than
500
Relative Response vs Wavelength
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
600
Wavelength (nm)
PARAMETER
700
(T
800
A
(T
= 25rC unless otherwise noted)
Phone: [phone] or [phone]
A
=25° C unless otherwise noted)
900
1000
1100
10.0
MIN
35
5
-
-
-
CEO
TYP
50
-
-
-
-
-
= 10
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
(0.04 T
MAX
100
1.7
1.0
80
60
40
20
-
-
-
-
A
0
FAX: [phone] [e-mail] www.optekinc.com
-3/4)
-90
where T
UNITS
Relative Response vs Angular Position
mA
µA
µs
V
V
V
-60
A
is the ambient temperature in ° C.
Angular Position (Degrees)
V
I
V
I
I
I
C
C
E
C
CE
CE
= 1 mA, E
= 400 µA
= 100 µA
= 1 mA, R
-30
= 5.0 V, E
= 5.0 V, E
TEST CONDITIONS
E
0
L
= 0.15 mW/cm
= 1 KŸ
E
E
= 0.15 mW/cm
= 0
(4)
-40
30
-25
o
C to +100
o
C to +85
100 mW
60
260° C
2(3)
32 mA
2(3)
35 V
5 V
o
o
(1)
(2)
C
C
90