OP520DA OPTEK TECHNOLOGY, OP520DA Datasheet - Page 2
![TRANSISTOR, PHOTO, NPN, 935NM, 1206](/photos/22/88/228889/4385984_sml.jpg)
OP520DA
Manufacturer Part Number
OP520DA
Description
TRANSISTOR, PHOTO, NPN, 935NM, 1206
Manufacturer
OPTEK TECHNOLOGY
Datasheet
1.OP520DA.pdf
(4 pages)
Specifications of OP520DA
Transistor Polarity
NPN
Wavelength Typ
935nm
Power Consumption
100mW
Viewing Angle
150°
No. Of Pins
2
Half Angle
160°
Rise Time
50µs
Transistor Type
Darlington
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Silicon Photo Darlington in Miniature 1206 SMD
Package
OP520DA, OP521DA
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Absolute Maximum Ratings
Notes:
1.
2.
Electrical Characteristics
3.
4.
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
Solder time less than 5 seconds at temperature extreme.
De-rate linearly at 2.17 mW/° C above 25° C.
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the photo darlington being tested.
To Calculate typical collector dark current in µA, use the formula I
SYMBOL
V
V
V
I
(BR)CEO
(BR)ECO
CE(SAT)
40
35
30
25
20
15
10
I
C(ON)
t
CEO
r
5
, t
0
f
Normalized at E
Conditions: V
= 935nm, T
Relative Collector Current-I
vs. Irradiance-Ee (mW/cm
Irradiance- Ee (mW/cm
0.5
A
CE
= 25 °C
Spectral range of sensitivity
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
OP521DA
OP520DA
Rise and Fall Times
e
= 5V,
= 1mW/cm
2
1.0
PARAMETER
(T
A
1.5
T
= 25rC unless otherwise noted)
A
2
)
= 25
C
(mA)
2
)
o
C unless otherwise noted
2.0
MIN
10.0
400
700
35
5
CEO
= 10
TYP
50
(0.04 T
140%
130%
120%
110%
100%
A
90%
80%
70%
-3/4)
-25
MAX
1100
1100
200
1.7
where T
Normalized at T
Conditions: V
= 935nm, T
Relative On-State Collector Current
A
UNITS
0
is the ambient temperature in ° C.
Temperature— T
mA
nm
nA
µs
A
CE
V
V
V
= 25 °C
vs. Temperature—(T
A
= 5V,
= 25°C .
25
V
I
CE
C
= 1mA, E
= 5.0V, E
V
50
I
I
I
C
CE
C
E
CONDITIONS
= 1mA, R
= 100µA, E
= 100µA, E
A
= 5.0V, E
V
(°C)
CE
e
e
= 5.0mW/cm
= 5.0V
75
= 0.5mW/cm
-40° C to +100° C
80°C
-25° C to +85° C
L
e
= 1K
A
Issue A
e
e
= 0
)
-40°C
= 0
= 0
100 mW
Page 2 of 4
100
(4)
260° C
30 mA
2 (3)
2 (3)
03.08
35V
5 V
(1)
(2)