OP501 OPTEK TECHNOLOGY, OP501 Datasheet - Page 4

• Manufacturer Part Number: OP501
• Description: TRANSISTOR, PHOTO, NPN, 935NM, 0805
• Manufacturer: OPTEK TECHNOLOGY

Specifications of OP501

• Transistor Polarity: NPN
• Wavelength Typ: 935nm
• Power Consumption: 75mW
• Viewing Angle: 150°
• No. Of Pins: 2
• Half Angle: 150°
• Rise Time: 15µs
• Voltage, Vcc: 5V
• Transistor Type: Photo
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
Issue A.4
Page 4 of 5
160%
140%
120%
100%
80%
60%
40%
20%
1000
100
02/09
0
10
Relative On-State Collector Current
1
-25
Normalized at E
Conditions: V
λ = 935nm, T
0
Conditions: E
V
1.0
CE
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
vs. Irradiance—Ee (mW/cm
Collector-Emitter Dark Current
= 10V
Ee—Irradiance (mW/cm
2.0
A
CE
= 25 °C
0
e
= 5V,
= 5mW/cm
e
vs. Temperature-T
= 0 mW/cm
Temperature—(°C)
3.0
25
2
4.0
2
5.0
Phone: [phone] or [phone]
50
6.0
2
)
A
7.0
2
75
)
OP500DA, OP501DA
8.0
OP500, OP501
100
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
140%
17.5
15.0
12.5
10.0
Relative On-State Collector Current-IC (mA)
130%
120%
110%
100%
90%
80%
70%
30
25
20
FAX: [phone] [e-mail] www.optekinc.com
0
vs. Collector-Emitter Voltage—V
Relative On-State Collector Current –
-25
Normalized at T
Conditions: V
λ = 935nm, T
Collector-Emitter Voltage (V)
0.5
0
vs. Temperature-T
CE
A
= 25 °C
Temperature—(°C)
A
= 5V,
= 25°C .
1.0
25
Ic (mA)
1.5
50
2.5
0.8 mW/cm
0.6 mW/cm
0.4 mW/cm
0.2 mW/cm
A
1.2 mW/cm
1.0 mW/cm
75
CE
2
2
2
2
2
2
(V)
3
100