S5972 HAMAMATSU, S5972 Datasheet - Page 2
![DIODE, PHOTO, 800NM, TO-18-3](/photos/39/48/394892/4766934_sml.jpg)
S5972
Manufacturer Part Number
S5972
Description
DIODE, PHOTO, 800NM, TO-18-3
Manufacturer
HAMAMATSU
Datasheet
1.S5973.pdf
(4 pages)
Specifications of S5972
Wavelength Typ
800nm
Sensitivity
0.57A/W
Bandwidth
500MHz
Dark Current
10pA
Diode Case Style
TO-18
No. Of Pins
3
Operating Temperature Range
-40°C To +100°C
Length/height, External
3.6mm
Active Area
0.5mm
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2
Spectral response
Frequency response
0.7
0.6
0.5
0.4
0.3
0.2
0.1
+10
-10
-20
0
1 MHz
-3
200
0
S5973-02
400
(V
10 MHz
S5971
R
=10 V)
WAVELENGTH
(Typ. Ta=25 ˚C, =830 nm, R
FREQUENCY
600
100 MHz
(V
S5972
R
S5973/-01
S5972
=10 V)
S5973
Si PIN photodiode
(nm)
(V
800
(Typ. Ta=25 ˚ C )
R
=3.3 V)
1 GHz
SERIES
S5971
1000
L
=50 )
10 GHz
KPINB0157EA
KPINB0159EB
S5971, S5972, S5973 series
Cut-off frequency vs. reverse voltage
Photo sensitivity temperature characteristics
100 MHz
10 MHz
10 GHz
1 GHz
+1.5
+1.0
+0.5
-0.5
1
0
200
S5973
SERIES
400
REVERSE VOLTAGE (V)
S5972
(Typ. Ta=25 ˚C, =830 nm, R
WAVELENGTH
600
S5972
S5973
10
S5971
SERIES
(nm)
800
S5971
L
=50 )
1000
(Typ.)
100
KPINB0160EB
KPINB0158EA