BPW34FS OSRAM, BPW34FS Datasheet

DIODE, PHOTO, 950NM, 60°, DIL

BPW34FS

Manufacturer Part Number
BPW34FS
Description
DIODE, PHOTO, 950NM, 60°, DIL
Manufacturer
OSRAM
Datasheet

Specifications of BPW34FS

Wavelength Typ
950nm
Sensitivity
0.59A/W
Half Angle
60°
Dark Current
2nA
Diode Case Style
SMD
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Length/height, External
1.15mm
Active Area
7mm
External Depth
6.45mm
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW34FS
Manufacturer:
Osram
Quantity:
883
Part Number:
BPW34FS(E9087)
Manufacturer:
TOSHIBA
Quantity:
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Manufacturer:
TI
Quantity:
325
Part Number:
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Manufacturer:
Siemens
Quantity:
7 590
Part Number:
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Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter
NEW: in SMT and as Reverse Gullwing
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Anwendungen
Semiconductor Group
Speziell geeignet für Anwendungen
bei 950 nm
kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher
Packungsdichte
BPW 34 FS/(E9087); geeignet für
Vapor-Phase Löten und IR-Reflow Löten
IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Gerätefernsteuerungen
Lichtschranken für Gleich- und
Wechsellichtbetrieb
Approx. weight 0.1 g
Cathode marking
0.6
0.4
0.8
0.6
4.0
3.7
0.5
0.3
Photosensitive area
2.65 mm x 2.65 mm
5.4
4.9
4.5
4.3
0.6
0.4
0 ... 5˚
5.08 mm
spacing
Chip position
GEO06643
1
Features
Applications
Especially suitable for applications
of 950 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
BPW 34 FS/(E9087); suitable for vapor-
phase and IR-reflow soldering
IR remote control of hi-fi and TV sets,
video tape recorders, remote controls of
various equipment
Photointerrupters
BPW 34 F
BPW 34 F
BPW 34 FS
BPW 34 FS (E9087)
1998-08-27

Related parts for BPW34FS

BPW34FS Summary of contents

Page 1

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter NEW: in SMT and as Reverse Gullwing Cathode marking 4.0 3.7 0.6 0.4 0.5 0.3 0.8 0.6 Photosensitive area 2. 2.65 mm ...

Page 2

Chip position 6.7 6.2 4.5 4.3 1.8 ±0.2 Photosensitive area 2. 2.65 mm Chip position 6.7 6.2 4.5 4.3 1.8 ±0.2 Photosensitive area 2. 2.65 mm Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless ...

Page 3

Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung Total power dissipation T Kennwerte ( = 950 nm) A Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral ...

Page 4

T Kennwerte ( = 950 nm) A Characteristics (cont’d) Bezeichnung Description Kurzschlußstrom 0.5 mW/cm e Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent ...

Page 5

Relative spectral sensitivity rel OHF00368 100 S % rel 700 800 900 1000 1200 Dark current = OHF00080 4000 R ...

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