BPW82 Vishay, BPW82 Datasheet - Page 3

• Manufacturer Part Number: BPW82
• Description: DIODE, PHOTO, 950NM, 65°, SIDE LOOKING
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder

Specifications of BPW82

• Wavelength Typ: 950nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: Side Looking
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Power Dissipation Pd: 0.215W
• Lens Type: Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 45 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Package / Case: Side Looker
• Maximum Operating Temperature: + 100 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 45uA
• Rise Time: 100ns
• Fall Time: 100ns
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Side View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPW82
Vishay Semiconductors
www.vishay.com
408
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
94 8415
94 8414
Fig. 3 - Reverse Light Current vs. Irradiance
948407
1000
100
100
0.1
10
80
60
40
20
10
1
1
0
0.01
0.1
0.1
λ
= 950 nm
V
E
V
R
e
R
- Reverse Voltage (V)
0.1
- Irradiance (mW/cm²)
1
- Reverse Voltage (V)
1
f = 1 MHz
E = 0
For technical questions, contact: [e-mail]
10
10
1 mW/cm
1
0.05 mW/cm
0.02 mW/cm
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
λ
V
= 950 nm
R
Silicon PIN Photodiode, RoHS Compliant
= 5 V
2
2
2
2
2
2
100
100
10
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
94 8426
94 8406
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
750
0.6
0.4
850
λ - Wavelength (nm)
0.2
950
0°
0
Document Number: 81529
10°
1050
Rev. 1.6, 08-Sep-08
20°
1150
30°
40°
50°
60°
70°
80°