BPW34S OSRAM, BPW34S Datasheet

DIODE, PHOTO, 850NM, 60°, SMD

BPW34S

Manufacturer Part Number
BPW34S
Description
DIODE, PHOTO, 850NM, 60°, SMD
Manufacturer
OSRAM
Datasheet

Specifications of BPW34S

Wavelength Typ
850nm
Sensitivity
0.62A/W
Half Angle
60°
Dark Current
2nA
Diode Case Style
SMD
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Length/height, External
1.15mm
Active Area
7mm
Rise Time
0.001µs
Rohs Compliant
Yes
External Depth
6.45mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW34S
Quantity:
1 500
Part Number:
BPW34S
Manufacturer:
VISHAY
Quantity:
120
Part Number:
BPW34S
Manufacturer:
OSRAM/欧司朗
Quantity:
20 000
Company:
Part Number:
BPW34S
Quantity:
4 490
Part Number:
BPW34S R18R
Manufacturer:
OSRAM
Quantity:
3 000
Part Number:
BPW34S R18R
Manufacturer:
OSRAM/欧司朗
Quantity:
20 000
Part Number:
BPW34S(E9087)
Manufacturer:
PT
Quantity:
60 000
Part Number:
BPW34S(R18R)
Manufacturer:
MOTOROLA
Quantity:
1 390
Part Number:
BPW34S-Z
Manufacturer:
OSRAM/欧司朗
Quantity:
20 000
Part Number:
BPW34SL
Manufacturer:
OSRAM
Quantity:
13 800
Part Number:
BPW34SR18R
Manufacturer:
OSRAM/欧司朗
Quantity:
20 000
Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing
Silicon PIN Photodiode; in SMT and as Reverse Gullwing
BPW 34, BPW 34 S, BPW 34 S (R18R)
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BPW 34 S/(R18R): geeignet für Vapor-Phase
Anwendungen
• Lichtschranken für Gleich- und
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPW 34
BPW 34 S
BPW 34 S (R18R)
2004-03-10
BPW 34
von 400 nm bis 1100 nm
Löten und IR-Reflow Löten (JEDEC level 4)
Wechsellichtbetrieb
Bestellnummer
Ordering Code
Q62702-P73
Q62702-P1602
Q62702-P1790
BPW 34 S
1
Features
• Especially suitable for applications from
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BPW 34 S/(R18R): suitable for vapor-phase
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
400 nm to 1100 nm
and IR-reflow soldering (JEDEC level 4)
BPW 34 S (R18R)

Related parts for BPW34S

BPW34S Summary of contents

Page 1

Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (R18R) BPW 34 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis ...

Page 2

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage T Verlustleistung Total power dissipation Kennwerte ( Normlicht Characteristics ( = 25 C, ...

Page 3

Kennwerte ( Normlicht Characteristics ( = 25 C, standard light A, A Bezeichnung Parameter E Leerlaufspannung, = 1000 Ix v Open-circuit voltage E Kurzschlußstrom, = 1000 Ix v Short-circuit current Anstiegs- und Abfallzeit ...

Page 4

Relative Spectral Sensitivity rel OHF00078 100 S % rel 400 500 600 700 800 900 nm 1100 Dark Current ...

Page 5

Maßzeichnung Package Outlines BPW 34 BPW 34 S Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2004-03-10 BPW 34, BPW 34 S, BPW 34 S (R18R) 5.4 (0.213) Cathode marking 4.9 (0.193) 4.0 ...

Page 6

... If they fail reasonable to assume that the health of the user may be endangered. 2004-03-10 BPW 34, BPW 34 S, BPW 34 S (R18R) Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 2 with the express written approval of OSRAM OS. 6 ...

Related keywords