TCLT1002 Vishay, TCLT1002 Datasheet - Page 4

• Manufacturer Part Number: TCLT1002
• Description: OPTOCOUPLER, TRANSISTOR, 5000VRMS
• Manufacturer: Vishay

Specifications of TCLT1002

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: SOP
• No. Of Pins: 4
• Propagation Delay: 6µs
• Isolation Voltage: 5kV
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 22% @ 1mA
• Current Transfer Ratio (max): 125% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Mounting Type: Surface Mount
• Package / Case: 4-SOP
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.6V
• Collector-emitter Voltage: 70V
• Package Type: SOP
• Collector Current (dc) (max): 50mA
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.3V
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Approval Bodies: BSI, DIN & FIMKO (SETI)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCLT10.. Series
Vishay Semiconductors
Insulation Rated Parameters
Fig. 1 Derating diagram
www.vishay.com
4
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Insulation resistance
94 9182
300
250
200
150
100
50
0
0
Parameter
25
T
si
– Safety Temperature ( °C )
IR-Diode
Isi ( mA )
50
Phototransistor
Psi ( mW )
75
100
100 %, t
t
(see figure 2)
V
V
V
(construction test only)
Tr
IO
IO
IO
= 60 s, t
= 500 V
= 500 V, T
= 500 V, T
125
test
Test condition
test
= 1 s
150
amb
amb
= 10 s,
= 100 °C
= 150 °C
Fig. 2 Test pulse diagram for sample test according to DIN EN
Symbol
V
13930
V
V
R
R
R
V
IOTM
V
V
pd
pd
IOWM
IO
IO
IO
IOTM
IORM
V
Pd
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
0
t
1
10
10
Min
10
1.6
1.3
8
12
11
9
t
t
t
1
3
stres
t
test
, t
, t
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
Typ.
Document Number 83515
Max
t
2
t
3
Rev. 1.7, 20-Apr-04
t
t
stres
test
t
t
4
VISHAY
Unit
kV
kV
kV
Ω
Ω
Ω