ILD2-X009T Vishay, ILD2-X009T Datasheet - Page 3

• Manufacturer Part Number: ILD2-X009T
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of ILD2-X009T

• No. Of Channels: 2
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: SMD
• No. Of Pins: 8
• Peak Reflow Compatible (260 C): No
• Isolation Voltage: 5.3kV
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 2 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Current Transfer Ratio: 500 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 400 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-8 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
Document Number: 83646
Rev. 1.7, 04-Nov-10
ELECTRICAL CHARACTERISTICS (T
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Saturation voltage, collector emitter
DC forward current gain
DC forward current gain saturated
Thermal resistance, junction to lead
COUPLER
Capacitance (input to output)
CURRENT TRANSFER RATIO
PARAMETER
I
(collector emitter
saturated)
C
evaluation. Typical values are for information only and are not part of the testing requirements.
/I
F
I
I
F
F
TEST CONDITION
=10 mA, V
=10 mA, V
For technical questions, contact:
CE
CE
Optocoupler, Phototransistor Output
= 0.4 V
= 10 V
V
V
I
V
C
CE
V
TEST CONDITION
V
CE
CE
IO
R
= 1 mA, I
= 0.4 V, I
amb
= 10 V, I
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
V
I
(Dual, Quad Channel)
F
VCE
V
= 60 mA
R
= 25 °C, unless otherwise specified)
= 6 V
= 10 V
PART
B
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
B
B
= 20 μA
= 20 μA
= 20 μA
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
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SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
SYMBOL
V
h
T
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
I
CESAT
C
R
C
CEO
h
FEsat
C
V
thJL
CE
CE
CE
CE
CE
CE
I
CE
FE
thjl
R
IO
F
O
MIN.
100
100
20
20
50
50
MIN.
200
120
Vishay Semiconductors
TYP.
170
170
100
100
200
200
130
130
TYP.
75
75
80
80
1.25
0.01
0.25
750
650
400
500
6.8
0.8
25
5
MAX.
MAX.
300
300
500
500
400
400
1800
1.65
600
0.4
10
50
www.vishay.com
UNIT
UNIT
K/W
K/W
μA
nA
%
%
%
%
%
%
%
%
%
%
%
%
pF
pF
pF
V
V
3