IL5 Vishay, IL5 Datasheet - Page 2
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IL5
Manufacturer Part Number
IL5
Description
OPTOCOUPLER, PHOTOTRANSISTOR, 5300VRMS
Manufacturer
Vishay
Datasheet
1.IL252.pdf
(9 pages)
Specifications of IL5
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
60mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
6
Mounting Type
Through Hole
Isolation Voltage
5.3kV
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.25 V
Current Transfer Ratio
400 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
400 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-6
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.65V
Forward Current
60mA
Collector-emitter Voltage
70V
Package Type
PDIP
Collector Current (dc) (max)
400mA
Power Dissipation
250mW
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IL5-216
Manufacturer:
VISHAY
Quantity:
5 510
Part Number:
IL510A-2
Manufacturer:
NVE
Quantity:
20 000
Part Number:
IL514-3
Manufacturer:
NVE
Quantity:
20 000
Part Number:
IL54123D
Manufacturer:
IL
Quantity:
20 000
Part Number:
IL54123DT
Manufacturer:
IKSEMICON
Quantity:
20 000
Part Number:
IL54123DT/M54123
Manufacturer:
IKSEMICON
Quantity:
20 000
Notes
(1)
(2)
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83612
Rev. 1.6, 10-Dec-08
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Package power dissipation
Derate linearly from 25 °C
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance junction to lead
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Collector emitter leakage voltage
Collector emitter saturation voltage
Base emitter voltage
DC forward current gain
DC forward current gain saturated
Thermal resistance junction to lead
COUPLER
Capacitance (input to output)
Insulation resistance
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: optocoupler.answers@vishay.com
V
V
V
I
V
V
CE
V
V
V
V
2.0 mm from case bottom
V
CE
CB
EB
IO
CE
IO
CE
CE
I-O
TEST CONDITION
R
(1)
= 1.0 mA, I
Output, with Base Connection
= 500 V, T
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
= 5.0 V, f = 1.0 MHz
TEST CONDITION
= 0 V, f = 1.0 MHz
Optocoupler, Phototransistor
= 500 V, T
= 0.4 V, I
= 0 V, f = 1.0 MHz
= 10 V, I
= 10 V, I
V
V
I
I
V
F
R
I-O
CE
R
= 60 mA
= 10 µA
= 6.0 V
= 500 V
= 10 V
B
B
B
amb
B
amb
= 20 µA
= 20 µA
= 20 µA
= 20 µA
= 100 °C
= 25 °C
SYMBOL
V
h
I
V
R
C
C
C
V
R
h
C
CEO
CEsat
FEsat
C
R
V
I
BR
CE
CB
BE
FE
R
thjl
EB
thjl
IO
O
F
S
PART
MIN.
200
120
6
SYMBOL
T
V
CTI
T
P
R
R
T
Vishay Semiconductors
amb
T
ISO
stg
sld
tot
IO
IO
j
TYP.
1.25
0.01
0.25
0.65
10
750
650
400
500
6.8
8.5
0.6
30
40
11
5
14
- 40 to + 150
- 40 to + 100
VALUE
≥ 10
≥ 10
5300
250
175
100
260
3.3
≥ 7
≥ 7
IL1, IL2, IL5
12
11
MAX.
1800
1.65
600
10
50
www.vishay.com
mW/°C
UNIT
V
mW
mm
mm
°C
°C
°C
°C
UNIT
RMS
Ω
Ω
K/W
K/W
µA
pF
pF
pF
pF
nA
pF
Ω
V
V
V
V
295