ELJ810-228B EPIGAP, ELJ810-228B Datasheet
ELJ810-228B
Manufacturer Part Number
ELJ810-228B
Description
IR EMITTER, JUMBO, 20DEG
Manufacturer
EPIGAP
Datasheet
1.ELJ810-228B.pdf
(1 pages)
Specifications of ELJ810-228B
Peak Wavelength
810nm
Forward Current If(av)
250mA
Rise Time
150ns
Fall Time Tf
150ns
Radiant Intensity
1.2W/Sr
Supply Voltage Range
13V
Operating Temperature Range
-60°C To +85°C
Viewing Angle
20°
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Infrared LED - Module
Absolute Maximum Ratings
at T
*Always protect the LED source against reverse currents
Optical and Electrical Characteristics
at T
Description
High-power infrared-LED module, double-hetero AlGaAs
structure, six chips are soldered on metal header, fast
switching time
Applications
Illumination for CCD-cameras, remote control and
optical communications, traffic signals,
measurement systems
DC forward current
Peak forward current
Reverse voltage*
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Forward voltage
Forward voltage
Radiant power
Radiant intensity
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
Thermal resistance junction-case
Schönbrunner Straße 7, A-1040 Vienna, Austria, Tel: +43-1-586 52 43-0, Fax: +43-1-586 52 43-44, office@roithner-laser.com
amb
amb
Radiation
Infrared
= 25°C, unless otherwise specified
= 25°C, unless otherwise specified
Parameter
Parameter
20 degrees
Type
on heat sink (S
ROITHNER LASERTECHNIK
t
Test conditions Symbol Min
p
Test conditions
I
I
I
I
I
I
I
I
F
F
F
F
F
F
F
F
10 µs, f 500 Hz
on heat sink
= 100 mA
= 250 mA
= 250 mA
= 250 mA
= 250 mA
= 250 mA
= 250 mA
= 250 mA
I
R
= 10 µA
AlGaAs/AlGaAs
Technology
50 cm²)
R
t
V
V
r
I
, t
thJC
e
p
F
F
0,5
e
f
Outline:
Symbol
T
T
I
V
790
T
I
FM
P
amb
stg
plastic lens, metal case
F
R
j
M10
10.5
Typ
225
810
150
ELJ-810-228B
H=13 mm (± 0,5)
1.2
13
30
20
10
-60 to +85
-60 to +85
Value
2000
Case
250
100
20
Max
3
830
W/sr
K/W
Unit
mW
deg
nm
nm
ns
V
V
Unit
mA
mA
°C
°C
°C
W
V
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