VSLB3940 Vishay, VSLB3940 Datasheet - Page 3

• Manufacturer Part Number: VSLB3940
• Description: IR EMITTER HIGH SPEED.940NM 3MM 22DEG-e2
• Manufacturer: Vishay

Specifications of VSLB3940

• Beam Angle: 22 deg
• Radiant Intensity: 65 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 160 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Fall Time: 15 ns
• Forward Current: 100 mA
• Forward Voltage: 1.35 V
• Mounting Style: Through Hole
• Operating Voltage: 1.35 V
• Rise Time: 15 ns
• Wavelength: 940 nm
• Package / Case: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BASIC CHARACTERISTICS
T
Document Number: 81931
Rev. 1.3, 23-Feb-10
amb
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
= 25 °C, unless otherwise specified
21951
21443
21534
1000
1000
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
110
108
106
104
102
100
100
100
0.1
10
98
96
94
92
90
10
1
1
0.001
0
- 40
T
t
p
amb
- 20
= 20 ms
V
I
F
F
- Ambient Temperature (°C)
- Forward Current (A)
- Forward Voltage (V)
0.01
1
0
20
I
40
t
F
p
For technical questions, contact:
= 1 mA
t
t
= 100 µs
p
p
0.1
/T= 0.001
2
= 100 µs
60
I
High Speed Infrared Emitting Diode,
F
= 100 mA
I
F
= 10 mA
80
100
940 nm, GaAlAs, MQW
1
3
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Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
21444
21441
21445
Fig. 7 - Relative Radiant Power vs. Wavelength
180
160
140
120
100
100
1.0
0.9
0.8
0.7
80
60
40
90
80
70
60
50
40
30
20
10
0
- 60 - 40 - 20
840
I
F
0.6
t
p
= 100 mA
I
F
= 20 ms
T
= 30 mA
amb
880
0.4
I
F
- Ambient Temperature (°C)
= 1 mA
Vishay Semiconductors
λ - Wavelength (nm)
0.2
0
920
20
0°
0
960
40
10°
60
1000
VSLB3940
20°
80
www.vishay.com
1040
100
30°
40°
50°
60°
70°
80°
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